Allicdata Part #: | KSC5305DFTTU-ND |
Manufacturer Part#: |
KSC5305DFTTU |
Price: | $ 0.73 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 400V 5A TO-220 |
More Detail: | Bipolar (BJT) Transistor NPN 400V 5A 75W Through ... |
DataSheet: | KSC5305DFTTU Datasheet/PDF |
Quantity: | 791 |
1 +: | $ 0.66150 |
10 +: | $ 0.59157 |
100 +: | $ 0.46148 |
500 +: | $ 0.38120 |
1000 +: | $ 0.30095 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 5A |
Voltage - Collector Emitter Breakdown (Max): | 400V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 400mA, 2A |
Current - Collector Cutoff (Max): | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 8 @ 2A, 1V |
Power - Max: | 75W |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220-3F |
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KSC5305DFTTU is a common type of bipolar junction transistors (BJT) which is specifically used for general purpose amplification. It usually comes in a TO-92 package and its maximum collector current is 500 mA. It is also commonly used as an indicator in other circuits.
A bipolar junction transistor (BJT) is a type of transistor that utilizes both p-type and n-type semiconductor materials. Generally speaking, BJTs are constructed with two outer components, the base and the collector, and one inner or middle component, the emitter. This setup creates a “junction” between the collector and the emitter because of the way the charge carriers (electrons and holes) can move across the p-n junctions.
The KSC5305DFTTU works by utilizing a current flowing through the base which controls a larger current from the collector to the emitter. This is due to the electrons and holes collected or released at the junction between the collector and the emitter. When current flows through the base, it allows electrons and holes to flow across the junction and increase the collector-emitter current.
In basic terms, this type of pattern of operation allows current gain to be obtained between the collector and the emitter. Thus, BJTs can be used to amplify current, voltage and power. These amplification capabilities have made BJTs very useful in many different applications such as switching circuits, audio amplifiers, radio frequency amplifiers and analog amplifiers.
The KSC5305DFTTU can be used in a broad range of applications. It is commonly used in audio amplifier circuits and integrated circuit amplifiers, as well as in operational amplifiers and analog circuits. Its primary application is as a general-purpose amplifier for audio, low-noise and low-power applications. It is also used for signal switch functions, since the transistor\'s on/off behavior can be controlled by the signal applied to its base.
The KSC5305DFTTU has a wide range of features, making it an ideal choice for many signal and power control applications. Some of its features include a wide band-gap, low noise, low current, low distortion, high current gain and various operating conditions such as high temperatures and high voltages. It is highly reliable and capable of withstanding numerous conditions, making it a good choice for various signal and power control operations.
In conclusion, the KSC5305DFTTU is a type of bipolar junction transistor (BJT) which is used in a variety of applications ranging from audio amplifiers to integrated circuit amplifiers. Its main application is for general purpose amplification, as its features and operating conditions make it highly suitable for such use. It is highly reliable and effective, making it a great choice for many signal and power control applications.
The specific data is subject to PDF, and the above content is for reference
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