KSC5338DWTM Allicdata Electronics
Allicdata Part #:

KSC5338DWTM-ND

Manufacturer Part#:

KSC5338DWTM

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 450V 5A D2-PAK
More Detail: Bipolar (BJT) Transistor NPN 450V 5A 11MHz 75W Sur...
DataSheet: KSC5338DWTM datasheetKSC5338DWTM Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 450V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 2A, 1V
Power - Max: 75W
Frequency - Transition: 11MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK
Description

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The KSC5338DWTM is a bipolar junction transistor that belongs to the single category of transistors. It is a PNP type transistor which is highly successful in supplying electrical power to various applications and meeting the demands of many industries, ranging from home appliances to applications in defense, communication and aerospace sectors. Its simple and reliable structure is capable of providing high switching power as well as offers low return current and reliability. The KSC5338DWTM is suitable for high-speed, low-loss switching for use in applications like power handling and voltage regulation.

The KSC5338DWTM is an ideal choice for many applications due to its reliable performance. This transistor has a high current gain, high breakdown voltage and low saturation voltage. With its wide range of switching characteristics, the device can easily handle voltages up to 500V and has a maximum collector current capability of 850mA. Furthermore, the device is capable of operating at temperatures up to 150 degrees Celsius and has a high power dissipation rate.

The KSC5338DWTM is a valuable device for the purposes of power conversion, voltage regulation and the production of electronic signals. It is also suitable for communication applications and its robust design ensures reliable performance under various conditions such as high temperature, high power, and high-speed environments. One of the most attractive features of the KSC5338DWTM is its high switching speed, which can reach up to 500kHz. Furthermore, the high-frequency response of the device makes it capable of handling fast switching under transient conditions.

The working principle of the KSC5338DWTM is the same as that of any other bipolar junction transistor. A base-emitter junction is formed with a current at the collector, turning the device on and off with the help of the base current. This allows for a high current gain, which can easily reach up to 5000. The device is capable of withstanding a wide range of voltages across the emitter-base junction, thus allowing it to be used in various high-voltage applications. Additionally, the KSC5338DWTM has a low saturation voltage, which is beneficial in dc-to-dc conversion, allowing it to be used in low-voltage applications as well.

The KSC5338DWTM is a highly reliable device and has been used in a wide range of applications, including consumer appliances, automotive, and aerospace among others. Its excellent performance combined with its robust design has made it a valuable choice for many industries. With its wide range of applications, the KSC5338DWTM can be used in a variety of conditions and environments, making it a great investment for many businesses.

The specific data is subject to PDF, and the above content is for reference

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