Allicdata Part #: | KSC5030FRTU-ND |
Manufacturer Part#: |
KSC5030FRTU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 800V 6A TO-3PF |
More Detail: | Bipolar (BJT) Transistor NPN 800V 6A 60W Through ... |
DataSheet: | KSC5030FRTU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 6A |
Voltage - Collector Emitter Breakdown (Max): | 800V |
Vce Saturation (Max) @ Ib, Ic: | 2V @ 600mA, 3A |
Current - Collector Cutoff (Max): | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 10 @ 600mA, 5V |
Power - Max: | 60W |
Frequency - Transition: | -- |
Operating Temperature: | -- |
Mounting Type: | Through Hole |
Package / Case: | SC-94 |
Supplier Device Package: | TO-3PF |
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The KSC5030FRTU is a type of single bipolar junction transistor (BJT) that is designed for a wide range of applications such as signal amplification, switching, and semiconductor device-making. BJTs are commonly used as active components in analog circuits and as switches in digital circuits. The KSC5030FRTU is able to handle high levels of current, has a fast switching speed, and can withstand a wide range of temperatures and environmental conditions.
The KSC5030FRTU features an N-P-N construction and is designed to operate with a variety of external circuits without requiring additional components. This makes it well-suited for applications like audio amplification and switching circuits, as well as for general purpose signal and power amplification. It can also be used in a variety of other applications like solenoid and motor control, voltage level shifting and switching, LED driver circuits, and power supply design.
The working principle of the KSC5030FRTU involves the application of a small current, or a base current, to one of the transistor\'s internally connected PN junction devices. This in turn opens a connection for a larger current to flow from the collector to the emitter across the second PN junction device. This effect is known as current amplification and is the basis of the transistor\'s operation.
The KSC5030FRTU features an NPN structure, which means it consists of three P-type semiconductors that are interconnected in a way that creates a three-point connection between each of the PN junction devices. The NPN structure is effective in amplifying current while also providing a reverse voltage capability. This makes it particularly useful for switching and signal amplification applications.
The KSC5030FRTU also features a high current capacity and low output impedance. These characteristics make it well-suited for applications like audio amplifiers, and allow it to handle high levels of current without overloading. It also has a low noise level, which contributes to its high signal-to-noise ratio and excellent audio quality. This makes it a popular choice for use in audio applications.
In addition to its wide range of practical applications, the KSC5030FRTU is also commonly used in educational settings for teaching and demonstrating the principles of semiconductor device physics. Students can use it to construct simple circuits and observe the transistor\'s operation, which helps to build an understanding of concepts like current amplification and the PN junction.
The KSC5030FRTU is a versatile and reliable component that is designed for a range of applications. Its fast switching speed, high current capacity, and low output impedance make it suitable for a wide range of signal and power amplification applications. Its high signal-to-noise ratio and robust design make it an excellent choice for audio applications. Its NPN structure also makes it a popular teaching tool in educational settings. In short, the KSC5030FRTU is a durable and reliable component that is well-suited for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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