Allicdata Part #: | LM5060QDGSRQ1-ND |
Manufacturer Part#: |
LM5060QDGSRQ1 |
Price: | $ 0.92 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Texas Instruments |
Short Description: | HIGH-SIDE PROTECTION CONTROLLER |
More Detail: | Gate Driver IC |
DataSheet: | LM5060QDGSRQ1 Datasheet/PDF |
Quantity: | 1000 |
3500 +: | $ 0.83859 |
Series: | * |
Part Status: | Active |
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The LM5060QDGSRQ1 is an integrated circuit (IC) designed to be used as a gate driver in PMIC applications. It is a dual, low-impedance output, high-side+low-side gate driver IC, capable of driving two low on-resistance MOSFETs, P-channel (high side) and N-channel (low side), in a high-side+low-side configuration. The main features of this IC include low operating current, fast switching, and low on-resistance. The primary application field for the LM5060QDGSR Q1 is in power supply applications, particularly those that use MOSFETs as the main switching element. It can be used for applications such as DC/DC converters, resonant converters, buck-boost converters, and high-performance DC/DC controllers. The high-side+low-side gate driver configuration is well-suited for these power supply circuits since it allows the two MOSFETs to be driven independently, allowing the high side MOSFET to start up and shut down faster. This makes the circuit more efficient and less susceptible to shoot-through current.The working principle of the LM5060QDGSRQ1 is straightforward. It consists of two independent output stages, one for the high-side MOSFET, and one for the low-side MOSFET. Each output stage consists of an output driver, an input buffer, and an over-temperature protection circuit. The output driver is designed to provide a low output impedance, and is capable of delivering up to 2.5A of peak current to the MOSFET gate. The input buffer is used to voltage limit the input signal, thereby protecting the MOSFET from excessive gate charging current. The over-temperature protection circuit is designed to shut down the output driver if the IC temperature exceeds 130°C. This IC offers an adjustable dead time that can be set from 0-2µS. This allows the user to set the switching overlap time between the high side and low side MOSFETs, reducing standby current and reducing EMI. It also offers an adjustable turn-on/turn-off current that can be set to a maximum of 1.5A. This feature ensures a smooth transition between the turn-on and turn-off states, which further reduces EMI.The LM5060QDGSRQ1 is well-suited to PMIC applications due to its low operating current, fast switching speeds, and low on-resistance. The adjustable dead time and turn-on/turn-off current also make it a good choice for applications that require low EMI. This IC is an effective solution for power supply applications that require precise gate driving of the high-side+low-side MOSFETs.
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