
Allicdata Part #: | 1086-4271-ND |
Manufacturer Part#: |
MAP4KE75CA |
Price: | $ 0.00 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 64.1V 103V DO204AL |
More Detail: | N/A |
DataSheet: | ![]() |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
1 +: | 0.00000 |
Voltage - Clamping (Max) @ Ipp: | 103V |
Supplier Device Package: | DO-204AL (DO-41) |
Package / Case: | DO-204AL, DO-41, Axial |
Mounting Type: | Through Hole |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 400W |
Current - Peak Pulse (10/1000µs): | 3.9A |
Series: | Military, MIL-PRF-19500 |
Voltage - Breakdown (Min): | 71.3V |
Voltage - Reverse Standoff (Typ): | 64.1V |
Bidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
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TVS diode plays an important role in overvoltage protection by limiting transient voltage signals. MAP4KE75CA is a trusted and reliable diode designed with the primary purpose being to protect sensitive electrical components from voltage spikes.The MAP4KE75CA is designed for clamping, and is a typical unidirectional TVS diode. The reverse avalanche breakdown voltage VBR of the diode is 75 volts. The power dissipation rate of the diode is rated at 500 watts, which makes it suitable for a wide range of applications.Applications of the MAP4KE75CA include protection of sensitive transistors (BJTs) in circuit applications, protection of high performance power systems from electrical overloads, and protection of electronic equipment from transient overloads. The diode can also be used to protect equipment from electrostatic discharge (ESD) and radio frequency interference (RFI). The working principle of MAP4KE75CA is based on the tunneling effect. When a voltage rises beyond the diode\'s clamping voltage, the pn-junction created between the diode\'s terminals starts to tunnel through the gap. This then causes electrons to move across the gap with their kinetic energy converting to potential energy, by the electric field effect, and the current flows. This effect is known as avalanche breakdown. The amount of kinetic energy of the electrons is proportional to the electric field strength, which in turn is proportional to the voltage across the junction. Thus, when the voltage is greater than the diode\'s breakdown voltage, the diode will start to conduct.
By conducting, the MAP4KE75CA acts as a voltage suppressor, which limits the flow of high-voltage current and prevents the damage of connected electrical components. The MAP4KE75CA has a bidirectional structure, which will also protect against ESD and RFI. The MAP4KE75CA has a low forward and reverse voltage drop, which helps to limit the effect of the voltage spike on the load. The peak pulse power of the diode is rated at 5kW. The diode is used in many applications where high surge current needs to be resisted without causing damage to the circuit.The MAP4KE75CA is also designed with a range of features that helps it to perform accurately in low noise environments. The diode has a low reverse leakage current, which helps to reduce the amount of pulsed noise created by the diode when it is activated.In summary, the MAP4KE75CA diode is a trusted, reliable and accurate solution for protecting sensitive electronic components from the effects of voltage transients. The diode is suitable for a wide range of applications and is ideal for circuit protection, ESD and RFI protection in low noise environments.
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