MAP4KE9.1AE3 Allicdata Electronics
Allicdata Part #:

1086-4282-ND

Manufacturer Part#:

MAP4KE9.1AE3

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 7.78V 13.4V DO204AL
More Detail: N/A
DataSheet: MAP4KE9.1AE3 datasheetMAP4KE9.1AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Voltage - Clamping (Max) @ Ipp: 13.4V
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 30A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 8.65V
Voltage - Reverse Standoff (Typ): 7.78V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS (transient-voltage-suppression) diodes are semiconductor components that are used to protect sensitive electronic equipment from voltage spikes due to inductive loading, lightning, and electrostatic discharge. They\'re an important tool in today\'s increasingly technology-driven world, and the MAP4KE9.1AE3 TVS diode is a particular application field of these components. This article will explain the application field, working principle, and other factors of the MAP4KE9.1AE3.

The MAP4KE9.1AE3 is a high-performance tranilent voltage suppression (TVS) diode, with a reverse breakdown voltage of up to 5.5V. The diode is constructed from two specially designed composite materials, with a low capacitance and low leakage rate. This means it can provide superior protection for sensitive electronic equipment from high-voltage transients, such as lightning.

The MAP4KE9.1AE3 is designed to protect electronic devices from surges that can cause permanent damage. It can operate in a wide range of environments, from industrial equipment to automotive systems, and is suitable for a variety of applications. The diode’s low capacitance and leakage rate make it ideal for high-speed data transfer applications, and its high breakdown voltage means it can withstand up to 5.5V without breaking down.

The working principle of the MAP4KE9.1AE3 is based on its ability to rapidly block high voltage transients while allowing a safe voltage level to pass through. When a transient voltage occurs, the component is subjected to a very high electric field. This causes an avalanche breakdown of the diode’s junction, which in turn results in the rapid conduction of the electrical current, reducing voltage spikes or overvoltages to a safe level.

The MAP4KE9.1AE3’s low capacitance and leakage rate makes it ideal for high-speed data transfer applications, allowing it to quickly and accurately detect and suppress transients. Additionally, the diode is designed to be resistant to thermal and mechanical shock, making it suitable for use in harsh environments. It is also corrosion-resistant, making it suitable for outdoor applications.

In conclusion, the MAP4KE9.1AE3 is an ideal application for TVS diodes due to its superior protection capabilities and design features. It is able to provide effective protection against high-voltage transients, while remaining resistant to thermal and mechanical shock, and corrosion. Furthermore, the diode can operate in a wide range of environments and is suitable for high-speed data transfer applications. Overall, the MAP4KE9.1AE3 is a reliable and effective way to protect sensitive electronic equipment from voltage spikes and transients.

The specific data is subject to PDF, and the above content is for reference

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