Allicdata Part #: | 1086-4473-ND |
Manufacturer Part#: |
MAP6KE100A |
Price: | $ 0.00 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 85.5V 137V T-18 |
More Detail: | N/A |
DataSheet: | MAP6KE100A Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
1 +: | 0.00000 |
Voltage - Clamping (Max) @ Ipp: | 137V |
Supplier Device Package: | T-18 |
Package / Case: | T-18, Axial |
Mounting Type: | Through Hole |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 600W |
Current - Peak Pulse (10/1000µs): | 4.4A |
Series: | Military, MIL-PRF-19500 |
Voltage - Breakdown (Min): | 95V |
Voltage - Reverse Standoff (Typ): | 85.5V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
MAP6KE100A belongs to the TVS - Diodes device family. It is a unidirectional device containing an internal temperature-compensated avalanche breakdown diode and a over voltage protection circuit to protect sensitive components from destructive electrostatic discharges. This device is characterized by a low capacitance, low operating or clamping voltage. In this article, the application field as well as the working principle of the MAP6KE100A will be discussed.
Application Field
MAP6KE100A is specifically designed for the protection of sensitive electronics from Electrostatic Discharge (ESD). In the electronics industry, in order to ensure product safety and reliability, components must be protected from field stresses. MAP6KE100A is a unidirectional device that provides this protection for components in ESD sensitive systems. It can be used to protect electronic components from voltage spikes caused by lightning, reverse voltages, and power surges.
MAP6KE100A is also used to protect sensitive electronics in harsh industrial environments. This device can provide protection for applications in factory automation and control, automotive, telecommunications, and off-shore equipment. It is also suitable for other ESD sensitive products like air conditioners, dish washers, automotive control modules, and digital cameras.
Working Principle
MAP6KE100A is a unidirectional device containing an internal temperature-compensated avalanche breakdown diode and a over voltage protection circuit. Its breakdown voltage ranges from 10V to 150V, depending on the specific part number. When a voltage spike or surge is applied on the input port, the avalanche breakdown diode turns on and conducts current, clamping the voltage at a safe level. The over voltage protection circuit then triggers, thus the device is ready to respond to the next surge.
The device also contains an internal series resistance which helps limit the peak current flow to protect the internal components. The MAP6KE100A is a low capacitance device with an operating or clamping voltage as low as 17V. This makes it suitable for use in high-frequency applications where capacitance adds too much distortion or interference. Furthermore, the device has a wide operating temperature range from -55°C to +125°C.
In conclusion, MAP6KE100A is a unidirectional TVS - Diodes device suitable for a wide range of protection applications. It offers low capacitance, low operating or clamping voltage, and a wide operating temperature range. This device is designed to protect sensitive components from destructive electrostatic discharges and other voltage spikes.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
MAP66006 | Laird Techno... | 0.08 $ | 1000 | ANT ASSY CARRIER MOLD BLA... |
MAP6KE100A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 85.5V 137V T-18 |
MAP6KE100AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 85.5V 137V T-18 |
MAP6KE100CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 85.5V 137V T-18 |
MAP6KE100CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 85.5V 137V T-18 |
MAP6KE10A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.55V 14.5V T-1... |
MAP6KE10AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.55V 14.5V T-1... |
MAP6KE10CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.55V 14.5V T-1... |
MAP6KE10CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.55V 14.5V T-1... |
MAP6KE110A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 94V 152V T-18 |
MAP6KE110AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 94V 152V T-18 |
MAP6KE110CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 94V 152V T-18 |
MAP6KE110CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 94V 152V T-18 |
MAP6KE11A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.4V 15.6V T-18 |
MAP6KE11AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.4V 15.6V T-18 |
MAP6KE11CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.4V 15.6V T-18 |
MAP6KE11CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.4V 15.6V T-18 |
MAP6KE120A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 102V 165V T-18 |
MAP6KE120AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 102V 165V T-18 |
MAP6KE120CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 102V 165V T-18 |
MAP6KE120CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 102V 165V T-18 |
MAP6KE12A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 10.2V 16.7V T-1... |
MAP6KE12AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 10.2V 16.7V T-1... |
MAP6KE12CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 10.2V 16.7V T-1... |
MAP6KE12CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 10.2V 16.7V T-1... |
MAP6KE130A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 111V 179V T-18 |
MAP6KE130AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 111V 179V T-18 |
MAP6KE130CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 111V 179V T-18 |
MAP6KE130CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 111V 179V T-18 |
MAP6KE13A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 11.1V 18.2V T-1... |
MAP6KE13AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 11.1V 18.2V T-1... |
MAP6KE13CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 11.1V 18.2V T-1... |
MAP6KE13CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 11.1V 18.2V T-1... |
MAP6KE150A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 128V 207V T-18 |
MAP6KE150AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 128V 207V T-18 |
MAP6KE150CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 128V 207V T-18 |
MAP6KE150CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 128V 207V T-18 |
MAP6KE15A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.8V 21.2V T-1... |
MAP6KE15AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.8V 21.2V T-1... |
MAP6KE15CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.8V 21.2V T-1... |
TVS DIODE 31V 56.4V DO214AB
TVS DIODE 8.5V 13.5V DO219AB
TVS DIODE 350V 690V CASE 5A
TVS DIODE 170V 334V CASE 5A
TVS DIODE 7.02V 12.1V T-18
TVS DIODE 78V 126V DO204AL