MAP6KE10CA

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The MAP6KE10CA is a TVS - Diodes, it has multiple applications in the field of electricity, electronics, and telecommunications, and a variety of industrial applications. It is a 6.5 kV peak pulse power, 4A (Ipp) peak pulse current, and -20V working voltage device, with a small package size of 3.2 mm x 1.5 mm.

The device has a high surge rating, low clamping voltage, and low operating current. It is widely used in high-speed data communication for interface protection, such as async data line, TTL, ECL, and RS-232. It can also be used in other applications such as computers, modems, mobile phones, and portable electronics.

The MAP6KE10CA is a diode with TrisilTM technology that combines the benefits of bidirectional protected diodes and two-line protection. It has three components, a diode, a suppressor and a gate. The diode is connected in series with the suppressor; this arrangement provides two-line protection with limited capacitance. The gate prevents the device from breaking down in response to a di/dt induced pulse.

The diode itself provides fast-acting bidirectional transient protection due to its low capacitance. The suppressor has a high surge rating, low operating voltage, and low operating current. The gate ensures that the diode will not break down in response to a di/dt induced pulse.

The MAP6KE10CA has a low working voltage, allowing it to be connected to a wide range of power supplies. The device is rated for 6.5kV peak pulse power, and 4A (Ipp) peak pulse current. This makes it a great choice for protecting delicate electronic devices from transient voltages. It has a low capacitance of 0.3pF and is RoHS compliant, making it suitable for use in a variety of industrial applications.

The MAP6KE10CA is widely used for transient suppression in telecommunications, electricity, electronics, and industrial applications due to its high surge rating, low clamping voltage, and low operating current. The TrisilTM technology ensures that the device has a low capacitance for fast response and minimal energy absorption; the gate ensures that it will not break down in response to di/dt induced pulses. This device is a great choice for protecting delicate electronic devices from transient voltages.

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