Allicdata Part #: | 1086-4496-ND |
Manufacturer Part#: |
MAP6KE12CAE3 |
Price: | $ 0.00 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 10.2V 16.7V T-18 |
More Detail: | N/A |
DataSheet: | MAP6KE12CAE3 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
1 +: | 0.00000 |
Voltage - Clamping (Max) @ Ipp: | 16.7V |
Supplier Device Package: | T-18 |
Package / Case: | T-18, Axial |
Mounting Type: | Through Hole |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 600W |
Current - Peak Pulse (10/1000µs): | 36A |
Series: | Military, MIL-PRF-19500 |
Voltage - Breakdown (Min): | 11.4V |
Voltage - Reverse Standoff (Typ): | 10.2V |
Bidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
.TVS - Diodes are increasingly used in applications as the technology advances. MAP6KE12CAE3, one such type of TVS - Diode, is suitable for a wide range of applications and its working principle makes it even more valuable and dependable.
MAP6KE12CAE3 is a unidirectional, low capacitance, ESD protection diode. It acts as an electrical component to prevent variances in voltage levels that could lead to component damage, data corruption, shorted circuit, or any other form of interference. This diode is designed to protect against Electrostatic Discharge (ESD) up to +- 22.5 kV and is used in applications such as LCD televisions, computers, data/telecommunication equipment, large scale integrated (LSI) circuits, and mobile phones.
MAP6KE12CAE3 adopts the Zener Breakdown principle. In this process, an alternating current passes through the diode with a controlled voltage. When this voltage reaches a predetermined level, the diode conducts and clamps the surge voltage to a safe level, thus protecting the connected equipment from spikes that could otherwise lead to serious damage.
The working principle of MAP6KE12CAE3 is relatively simple: the alternating current passes through the diode and when the voltage level reaches a predetermined threshold, the diode conducts and clamps the surge voltage to a safe level. The device also has a low capacitance rating which prevents the harmful propagation of high-frequency electromagnetic interferences.
The device\'s protective capabilities extend further than ESD protection. It effectively protects against overvoltage transients and inrush current. The device can operate over a wide temperature range and provides stable protection in both high and low temperatures. The physical structure of the diode is hermetically sealed, providing better insulation, greater reliability and improved safety performance.
In conclusion, MAP6KE12CAE3 is a versatile and reliable type of TVS - Diode used in a wide range of applications. Its Zener Breakdown principle provides effective protection against ESD and overvoltage transients, and its low capacitance ratings prevent the propagation of high-frequency electromagnetic interferences. With its impressive temperature range and hermetically sealed structure, the device provides safe and stable performance, making it a valuable addition to any application.
The specific data is subject to PDF, and the above content is for reference
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MAP6KE11A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.4V 15.6V T-18 |
MAP6KE11AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.4V 15.6V T-18 |
MAP6KE11CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.4V 15.6V T-18 |
MAP6KE11CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.4V 15.6V T-18 |
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MAP6KE120CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 102V 165V T-18 |
MAP6KE120CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 102V 165V T-18 |
MAP6KE12A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 10.2V 16.7V T-1... |
MAP6KE12AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 10.2V 16.7V T-1... |
MAP6KE12CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 10.2V 16.7V T-1... |
MAP6KE12CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 10.2V 16.7V T-1... |
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MAP6KE130AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 111V 179V T-18 |
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