Allicdata Part #: | 1086-4482-ND |
Manufacturer Part#: |
MAP6KE110AE3 |
Price: | $ 0.00 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 94V 152V T-18 |
More Detail: | N/A |
DataSheet: | MAP6KE110AE3 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
1 +: | 0.00000 |
Specifications
Voltage - Clamping (Max) @ Ipp: | 152V |
Supplier Device Package: | T-18 |
Package / Case: | T-18, Axial |
Mounting Type: | Through Hole |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 600W |
Current - Peak Pulse (10/1000µs): | 3.4A |
Series: | Military, MIL-PRF-19500 |
Voltage - Breakdown (Min): | 105V |
Voltage - Reverse Standoff (Typ): | 94V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
MAP6KE110AE3 is a Bidirectional Transient Voltage Suppressor (TVS) Diode. It offers superior performance compared to standard TVS diodes, and it is extremely useful in protection applications. MAP6KE110AE3 is ideal for use in sensitive electronic equipment and high-voltage systems.The MAP6KE110AE3 is a high-performance, low-capacitance, bidirectional TVS diode. It is designed to protect sensitive electronic components and systems from voltage transients in an application. The MAP6KE110AE3 has an operating voltage of 5.0 volts and offers superior ESD protection and clamping performance. It has a reverse leakage current of less than 10uA when used at rated voltage.The MAP6KE110AE3 is constructed with a combination of two solid-state devices. The first device is a lightly-doped n-type diode, whose junction region is a pure diffusion region. The second device is a heavily-doped n-type diode, which has been doped such that it can be used as a source of minority carriers. The two devices are combined in a single package in order to protect the input and output stages of the system from voltage transients.In operation, the MAP6KE110AE3 works in conjunction with other components to increase the robustness of a system. It functions as a clamp to limit the amount of energy that can be dissipated by the system when exposed to a transient. The current source in the device works in conjunction with the lightly-doped n-type diode to help stabilize the voltage within the system. The device also serves as a reverse-path overload protection to limit the current that can flow through the system when it is exposed to excessive voltage or current spikes.The MAP6KE110AE3 is commonly used in power systems, telecommunications, and a variety of other applications. It is particularly suitable for high-voltage systems, where its robustness and low-leakage current characteristics make it a great choice for voltage protection. This device also has very low jitter, making it suitable for applications that require high-precision timing.The MAP6KE110AE3 is a very versatile and reliable device. It offers excellent ESD protection and is suitable for use in a wide range of applications. Moreover, it is an ideal choice for use in systems that require reliable voltage protection, such as power systems and telecommunications. With its robustness and low leakage current characteristics, the MAP6KE110AE3 is an excellent choice for any system requiring voltage protection.The specific data is subject to PDF, and the above content is for reference
Related Products
Search Part number : "MAP6" Included word is 40
Part Number | Manufacturer | Price | Quantity | Description |
---|
MAP66006 | Laird Techno... | 0.08 $ | 1000 | ANT ASSY CARRIER MOLD BLA... |
MAP6KE100A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 85.5V 137V T-18 |
MAP6KE100AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 85.5V 137V T-18 |
MAP6KE100CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 85.5V 137V T-18 |
MAP6KE100CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 85.5V 137V T-18 |
MAP6KE10A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.55V 14.5V T-1... |
MAP6KE10AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.55V 14.5V T-1... |
MAP6KE10CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.55V 14.5V T-1... |
MAP6KE10CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.55V 14.5V T-1... |
MAP6KE110A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 94V 152V T-18 |
MAP6KE110AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 94V 152V T-18 |
MAP6KE110CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 94V 152V T-18 |
MAP6KE110CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 94V 152V T-18 |
MAP6KE11A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.4V 15.6V T-18 |
MAP6KE11AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.4V 15.6V T-18 |
MAP6KE11CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.4V 15.6V T-18 |
MAP6KE11CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.4V 15.6V T-18 |
MAP6KE120A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 102V 165V T-18 |
MAP6KE120AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 102V 165V T-18 |
MAP6KE120CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 102V 165V T-18 |
MAP6KE120CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 102V 165V T-18 |
MAP6KE12A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 10.2V 16.7V T-1... |
MAP6KE12AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 10.2V 16.7V T-1... |
MAP6KE12CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 10.2V 16.7V T-1... |
MAP6KE12CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 10.2V 16.7V T-1... |
MAP6KE130A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 111V 179V T-18 |
MAP6KE130AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 111V 179V T-18 |
MAP6KE130CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 111V 179V T-18 |
MAP6KE130CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 111V 179V T-18 |
MAP6KE13A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 11.1V 18.2V T-1... |
MAP6KE13AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 11.1V 18.2V T-1... |
MAP6KE13CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 11.1V 18.2V T-1... |
MAP6KE13CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 11.1V 18.2V T-1... |
MAP6KE150A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 128V 207V T-18 |
MAP6KE150AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 128V 207V T-18 |
MAP6KE150CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 128V 207V T-18 |
MAP6KE150CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 128V 207V T-18 |
MAP6KE15A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.8V 21.2V T-1... |
MAP6KE15AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.8V 21.2V T-1... |
MAP6KE15CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.8V 21.2V T-1... |
Latest Products
SMCJ6053/TR13
TVS DIODE 31V 56.4V DO214AB
VTVS8V5GSMF-HM3-18
TVS DIODE 8.5V 13.5V DO219AB
MRT100KP350CAE3
TVS DIODE 350V 690V CASE 5A
MRT100KP170CA
TVS DIODE 170V 334V CASE 5A
MP6KE8.2AE3
TVS DIODE 7.02V 12.1V T-18
MP5KE78AE3
TVS DIODE 78V 126V DO204AL