MAP6KE8.2AE3

MAP6KE8.2AE3 is an ultra low ESD/surge protection diode manufactured by NXP Semiconductors. This diode is an ultra-small (6 by 6mm) package and is design for memory protection. The unique design of the MAP6KE8.2AE3 device offers dual protection from Electro Static Discharge (ESD) and surge events using an avalanche junction diode (AJD). The diode is designed with a 600 Watt power rating and an ESD tolerance level of up to ±15kV (Human Body Model).

The working principle of the MAP6KE8.2AE3 device is quite simple. When the input voltage exceeds the diode’s breakdown voltage, the avalanche junction breakdown occurs at the PN junction. This in turn causes electrons to be injected into the P-type semiconductor from the N-type, therefore producing an avalanche effect. This sudden change of current is then used to protect sensitive electronic components from ESD and surge events.

The MAP6KE8.2AE3 diode is suitable for lightning protection in automotive applications, personal computers and electronic payments systems. It has also been used in the telecommunications field as ESD protection for EMI filters. Its high ESD protection level (± 15kV) and its ultra-small size make it an ideal solution for data line protection such as USB, HDMI and D-Sub connectors.

In addition, the MAP6KE8.2AE3 also features a fast di/dt recovery time (i.e. low dv/dt), superior dynamic thermal resistance (lower Zth) and an enhanced thermal shock survivability of up to 2000V ESD. All these features make it an ideal choice for circuit protection when a short recovery time is essential.

The MAP6KE8.2AE3 diode is a powerful, reliable and cost-effective solution for protecting sensitive electronic components from ESD and surge events. With its unique design and characteristics, it offers superior electronic transient protection and is suitable for a wide range of applications.