| Allicdata Part #: | 1086-4550-ND |
| Manufacturer Part#: |
MAP6KE27AE3 |
| Price: | $ 0.00 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE 23.1V 37.5V T-18 |
| More Detail: | N/A |
| DataSheet: |  MAP6KE27AE3 Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| 1 +: | 0.00000 |
Specifications
| Voltage - Clamping (Max) @ Ipp: | 37.5V |
| Supplier Device Package: | T-18 |
| Package / Case: | T-18, Axial |
| Mounting Type: | Through Hole |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 600W |
| Current - Peak Pulse (10/1000µs): | 16A |
| Series: | Military, MIL-PRF-19500 |
| Voltage - Breakdown (Min): | 25.7V |
| Voltage - Reverse Standoff (Typ): | 23.1V |
| Unidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Bulk |
Description
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MAP6KE27AE3 is a TVS - Diode type device that finds use in a wide range of applications, ranging from being used in protection devices for the circuit to being used in power modules. The TVS-Diodes are manufactured using a wide range of materials, such as silicon, gallium arsenide, and commonly employed in high frequency, high switching frequency, high voltage, high density circuits. As such, they are essential in electrical and electronics equipment, protection devices, and more.This particular device, MAP6KE27AE3, is a low capacitance TVS Diode. It has a very small clamping voltage of 7.1V, making it suitable for use in a wide variety of circuit protection devices. It also has an ultra-low capacitance of 1.0pF, making it ideal for high speed switching applications. This part is also capable of handling up to 27A pulse current for a period of 5/1000th of a second.The MAP6KE27AE3 is noted for its excellent clamping performance, even under the most extreme conditions such as high switching frequencies and high voltage transients. In addition, this device also has a low "turn-on" voltage, which reduces the power consumption of the system. The working principle of the MAP6KE27AE3 is underpinned by its low capacitance and high peak pulse current capabilities. When a surge of current is detected by the device, it reacts by switching its internal pass element. This switch limits the flow of current and creates a voltage drop, thus preventing destruction of the circuit. In addition, the device can switch rapidly enough to prevent any damage from occurring due to current surges. Overall, the MAP6KE27AE3 is an ideal choice for use in any kind of protection device, such as lightning arresters, fuses, and surge suppressors. It has a low capacitance and high peak pulse current, making it perfect for high frequency, high switching frequency, and high voltage applications.
The specific data is subject to PDF, and the above content is for reference
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| MAP6KE10A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.55V 14.5V T-1... |
| MAP6KE170CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 145V 234V T-18 |
| MAP6KE11CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.4V 15.6V T-18 |
| MAP6KE56AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 47.8V 77V T-18 |
| MAP6KE15CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.8V 21.2V T-1... |
| MAP6KE16CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13.6V 22.5V T-1... |
| MAP6KE18CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 15.3V 25.2V T-1... |
| MAP6KE160CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 136V 219V T-18 |
| MAP6KE160CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 136V 219V T-18 |
| MAP6KE36CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 30.8V 49.9V T-1... |
| MAP6KE7.5CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.4V 11.3V T-18 |
| MAP6KE8.2A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 7.02V 12.1V T-1... |
| MAP6KE10AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.55V 14.5V T-1... |
| MAP6KE56A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 47.8V 77V T-18 |
| MAP6KE91A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 77.8V 125V T-18 |
| MAP6KE75CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 64.1V 103V T-18 |
| MAP6KE120CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 102V 165V T-18 |
| MAP6KE36AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 30.8V 49.9V T-1... |
| MAP6KE82AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 70.1V 113V T-18 |
| MAP6KE91AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 77.8V 125V T-18 |
| MAP6KE22AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.8V 30.6V T-1... |
| MAP6KE27CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 23.1V 37.5V T-1... |
| MAP6KE130CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 111V 179V T-18 |
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| MAP6KE110CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 94V 152V T-18 |
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| MAP6KE51CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 43.6V 70.1V T-1... |
| MAP6KE7.5CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.4V 11.3V T-18 |
| MAP6KE100CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 85.5V 137V T-18 |
| MAP6KE24CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 20.5V 33.2V T-1... |
| MAP6KE200A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 171V 274V T-18 |
| MAP6KE16AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13.6V 22.5V T-1... |
| MAP6KE6.8CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5.8V 10.5V T-18 |
| MAP6KE18AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 15.3V 25.2V T-1... |
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