| Allicdata Part #: | 1086-4556-ND |
| Manufacturer Part#: |
MAP6KE30CAE3 |
| Price: | $ 0.00 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE 25.6V 41.4V T-18 |
| More Detail: | N/A |
| DataSheet: | MAP6KE30CAE3 Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| 1 +: | 0.00000 |
| Voltage - Clamping (Max) @ Ipp: | 41.4V |
| Supplier Device Package: | T-18 |
| Package / Case: | T-18, Axial |
| Mounting Type: | Through Hole |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 600W |
| Current - Peak Pulse (10/1000µs): | 14.4A |
| Series: | Military, MIL-PRF-19500 |
| Voltage - Breakdown (Min): | 28.5V |
| Voltage - Reverse Standoff (Typ): | 25.6V |
| Bidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Bulk |
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MAP6KE30CAE3 TVS diodes (Transient Voltage Suppressor) are designed to protect sensitive electrical components and circuits from damaged caused by transients. They provide a low capacitance device solution that is designed to reduce Electrostatic Discharge (ESD) and transient voltage damage. This device is available in a variety of surface mount packages and sizes, and is available in a variety of voltage and current ratings, making it ideal for applications requiring higher voltage protection.
MAP6KE30CAE3 is a bipolar junction transistor (BJT) type diode with a transient voltage suppression protection rating. The device’s two terminals can be connected to the positive and negative terminals of a circuit so that it will be able to provide protection from voltage spikes and transients. The device is rated to have a transient voltage suppression rating (TVS) of 30V and a peak power of 400W. It is constructed of a single semiconductor die and has good ESD protection characteristics.
MAP6KE30CAE3 exhibits very low capacitance values and has an extremely fast response time, making it an ideal choice for high-frequency applications. The device is available in a surface mount package and is RoHS compliant. It is designed to provide superior overvoltage protection for delicate and sensitive components in the following applications:
• Portable electronic devices
• Telecommunications infrastructure
• Data processing equipment
• Automotive electronics
• Power grids
To understand how the MAP6KE30CAE3 works, it is important to know how a diode works. A diode is a two-terminal electronic device consisting of a P-N junction, and is one of the major components of diode circuit. When a forward bias voltage is applied to the diode’s electrodes, current flows from the positive electrode to the negative electrode. On the other hand, in a reverse bias voltage, current flows from the negative electrode to the positive electrode.
In the case of the MAP6KE30CAE3, the diode provides a fast response for suppressing voltage fluctuations from overvoltage transients on the line from positive to negative. The device works in accordance with the following principle: when a transient voltage surge is sensed, the device rapidly begins to “clamp” the voltage to a predetermined and safe level. The device is designed to “absorb” the energy from the transient and dissipate it as heat, protecting the device and the circuit’s components from overvoltage damage.
In summary, the MAP6KE30CAE3 is a two-terminal device offering fast and effective protection from electrical transients and ESD. It can be used in a variety of applications, as it offers excellent protection characteristics and is available in a variety of forms. Additionally, it has a low capacitance value and fast response time for high-frequency applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MAP6KE160AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 136V 219V T-18 |
| MAP6KE33AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 28.2V 45.7V T-1... |
| MAP6KE150CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 128V 207V T-18 |
| MAP6KE39CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 33.3V 53.9V T-1... |
| MAP6KE20AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 17.1V 27.7V T-1... |
| MAP6KE10A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.55V 14.5V T-1... |
| MAP6KE170CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 145V 234V T-18 |
| MAP6KE11CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.4V 15.6V T-18 |
| MAP6KE56AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 47.8V 77V T-18 |
| MAP6KE15CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.8V 21.2V T-1... |
| MAP6KE16CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13.6V 22.5V T-1... |
| MAP6KE18CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 15.3V 25.2V T-1... |
| MAP6KE160CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 136V 219V T-18 |
| MAP6KE160CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 136V 219V T-18 |
| MAP6KE36CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 30.8V 49.9V T-1... |
| MAP6KE7.5CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.4V 11.3V T-18 |
| MAP6KE8.2A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 7.02V 12.1V T-1... |
| MAP6KE10AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.55V 14.5V T-1... |
| MAP6KE56A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 47.8V 77V T-18 |
| MAP6KE91A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 77.8V 125V T-18 |
| MAP6KE75CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 64.1V 103V T-18 |
| MAP6KE120CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 102V 165V T-18 |
| MAP6KE36AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 30.8V 49.9V T-1... |
| MAP6KE82AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 70.1V 113V T-18 |
| MAP6KE91AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 77.8V 125V T-18 |
| MAP6KE22AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.8V 30.6V T-1... |
| MAP6KE27CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 23.1V 37.5V T-1... |
| MAP6KE130CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 111V 179V T-18 |
| MAP6KE100CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 85.5V 137V T-18 |
| MAP6KE110CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 94V 152V T-18 |
| MAP6KE120AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 102V 165V T-18 |
| MAP6KE47CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 40.2V 64.8V T-1... |
| MAP6KE51CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 43.6V 70.1V T-1... |
| MAP6KE7.5CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.4V 11.3V T-18 |
| MAP6KE100CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 85.5V 137V T-18 |
| MAP6KE24CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 20.5V 33.2V T-1... |
| MAP6KE200A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 171V 274V T-18 |
| MAP6KE16AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13.6V 22.5V T-1... |
| MAP6KE6.8CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5.8V 10.5V T-18 |
| MAP6KE18AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 15.3V 25.2V T-1... |
TVS DIODE 31V 56.4V DO214AB
TVS DIODE 8.5V 13.5V DO219AB
TVS DIODE 350V 690V CASE 5A
TVS DIODE 170V 334V CASE 5A
TVS DIODE 7.02V 12.1V T-18
TVS DIODE 78V 126V DO204AL
MAP6KE30CAE3 Datasheet/PDF