MAP6KE170A Allicdata Electronics
Allicdata Part #:

1086-4521-ND

Manufacturer Part#:

MAP6KE170A

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 145V 234V T-18
More Detail: N/A
DataSheet: MAP6KE170A datasheetMAP6KE170A Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Voltage - Clamping (Max) @ Ipp: 234V
Supplier Device Package: T-18
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 2.6A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 161V
Voltage - Reverse Standoff (Typ): 145V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS-Diodes are a type of electrical component used for transient voltage suppression. One example of a TVS Diode is MAP6KE170A, which offers high-frequency protection against Electrical Fast Transients (EFT). This type of diode can absorb high surge voltages while operating normally at typical working voltages. It also offers superior reliability, thanks to its redundant active circuitry. This article will explain the application field and working principle of MAP6KE170A.

Application Field of MAP6KE170A

MAP6KE170A is a leading-edge protection device for thin film transistors (TFTs) and LCDs. Its surge rating of 6kV/4A minimizes the chances of transient voltage disrupt operation of delicate electronics. It is suitable for use in cellular phones, electronic games, PSPs, digital cameras, and other consumer electronics. It is also ideal for use in power applications such as Processors, Load Switches, FETs, and IGBTs where protection against EFT is needed.

Working Principle of MAP6KE170A

MAP6KE170A is a TVS diode based on the nonlinear design. It consists of a diode and an insulated gate electrode that are arranged at an optimum refractive angle. This allows it to absorb high surge voltages without any damage to its components. When an EFT event is detected, the active circuitry of the device creates a conductive channel between the anode and the cathode. This allows the excess energy to be discharged quickly and safely. The diode does not conduct current during normal operation and remains in its non-conductive state until the unsafe surge voltage is detected.

The MAP6KE170A features an optimized EFT protection circuitry which actively monitors for transient events and triggers the protection mechanism when the voltage level crosses the specified threshold. This ensures that the device remains active when transient voltages occur. The combination of this feature and the optimized refractive angle in the nonlinear design provides superior protection against EFTs while operating at a normal operating voltage.

The active circuitry of the MAP6KE170A also allows it to detect and monitor the current flow during normal operation. This helps to reduce power consumption and prolongs the life of the device. Additionally, the nonlinear design of the diode results in low switching losses to further enhance energy efficiency.

Conclusion

MAP6KE170A is an advanced TVS diode designed to provide high surge voltages protection for a wide variety of devices. Its active circuitry allows it to monitor both surge voltage and current levels, and its optimized refractive angle provides superior performance in terms of EFT protection. These features make it ideal for use in consumer electronics, processors, and IGBTs, where protection against EFTs is needed.

The specific data is subject to PDF, and the above content is for reference

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