MAP6KE18A Allicdata Electronics
Allicdata Part #:

1086-4529-ND

Manufacturer Part#:

MAP6KE18A

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 15.3V 25.2V T-18
More Detail: N/A
DataSheet: MAP6KE18A datasheetMAP6KE18A Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Voltage - Clamping (Max) @ Ipp: 25.2V
Supplier Device Package: T-18
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 24A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 17.1V
Voltage - Reverse Standoff (Typ): 15.3V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS - Diodes, or trans-zener diodes, are versatile and efficient electrical components used in many different applications. The MAP6KE18A is one of the most popular and widely-used TVs-diodes. This article will provide an overview of the MAP6KE18A\'s application field and working principle.

The MAP6KE18A is a high-speed unidirectional TVS-diode designed to provide ESD protection of data interfaces. It has an operating voltage range between 2.8V and 36V and can absorb ESD pulses up to 40A without any damage. The MAP6KE18A also offers excellent clamping performance and fast response times, making it ideal for applications where robust ESD protection is required.

The MAP6KE18A is used in a wide range of applications, from consumer electronics and automotive to industrial and medical. It can be used for interface protection in a variety of devices, such as cell phones, tablets, laptops, and more. It is also used for circuit board protection in medical equipment, and to protect sensitive components from ESD damage in automotive and industrial applications.

The working principle of the MAP6KE18A is based on the Zener breakdown effect. This is achieved using a semiconductor material with an reverse breakdown voltage (VBR) below 5.5V. When an ESD voltage exceeds the VBR level, the diode starts to conduct heavily. This establishes a low-resistance path for the high ESD current, thus protecting the circuit from overvoltage.

In addition to ESD protection, the MAP6KE18A offers excellent surge performance as well. It has a low clamping voltage and low capacitance, which results in fast response times and minimal signal distortion. This makes it ideal for protecting data lines against EMI and RFI interference.

The MAP6KE18A is a reliable and robust protection device that can be used in a wide range of applications. It offers superior ESD protection, fast response times, and low clamping voltage. Its versatility, efficiency, and reliability make it a popular and widely-used TVS-diode.

The specific data is subject to PDF, and the above content is for reference

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