MAP6KE51A Allicdata Electronics
Allicdata Part #:

1086-4577-ND

Manufacturer Part#:

MAP6KE51A

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 43.6V 70.1V T-18
More Detail: N/A
DataSheet: MAP6KE51A datasheetMAP6KE51A Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Voltage - Clamping (Max) @ Ipp: 70.1V
Supplier Device Package: T-18
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 8.6A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 48.5V
Voltage - Reverse Standoff (Typ): 43.6V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS-Diodes are electronic components designed to protect sensitive equipment from premature failure and distress due to transient voltages. These devices are typically used in applications such as power supplies, audio/video systems and in automotive systems. The MAP6KE51A is a popular example of one such device.
The MAP6KE51A is a bidirectional TVS diode designed to provide electrostatic discharge (ESD) protection at the I/O port. It is an integrated circuit that contains a Zener diode and a MOS transistor in one device. The device is no more than 2mm in size and has a maximum on-state voltage of 21V with a breakdown voltage of +/-15V.
The MAP6KE51A’s diode structure is designed to conduct the surge current through the Zener diode without the associated constraints associated with traditional silicon avalanche diodes. This means that no additional voltage or energy is required for its protection. The MOS transistor in the device further enhances this protection by clamping the voltage of the affected port in the case of excessive current drawn by the device. It also provides a mechanism to automatically disconnect the port in the event of an over-voltage condition.
The MAP6KE51A is widely used in logic level applications such as microprocessors, microcontrollers, and memory integrated circuits (ICs). In these applications, data is transferred over the I/O port at high speeds. An ESD event can cause the device to draw current, which could cause data damage. The MAP6KE51A can provide protection from such instantaneous ESD events at the I/O port.
The device also finds use in audio and video applications. It can provide a level of protection to the delicate circuitry involved in these applications. In video systems, it can ensure the data transmitted over the I/O ports remains uncompromised due to the presence of any accidental ESD events.
The MAP6KE51A is also frequently used in the automotive industry. A heavy load is put on electrical and electronic components in these environments. The device can provide reliable and robust protection for these components, preventing them from delivering compromised data or electrical power signals.
Overall, the MAP6KE51A is a versatile and reliable TVS diode that provides reliable protection for sensitive circuitry from ESD events. Its small size makes it easy to integrate into electronics designs, and its wide operating voltage makes it suitable for applications with varying voltage requirements. Its use in applications across industries has made it one of the most popular TVS diodes.

The specific data is subject to PDF, and the above content is for reference

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