MAP6KE75AE3 Allicdata Electronics
Allicdata Part #:

1086-4602-ND

Manufacturer Part#:

MAP6KE75AE3

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 64.1V 103V T-18
More Detail: N/A
DataSheet: MAP6KE75AE3 datasheetMAP6KE75AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Voltage - Clamping (Max) @ Ipp: 103V
Supplier Device Package: T-18
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 5.8A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 71.3V
Voltage - Reverse Standoff (Typ): 64.1V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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A TVS diode, or transient voltage suppressor diode, is a semiconductor device designed to protect electronic circuits and equipment from transient voltage spikes. The MAP6KE75AE3 is a low-capacitance unidirectional TVS diode that provides overvoltage protection for high-speed data line applications. Its maximum working voltage is 43V, and it offers an ESD protection of up to 8kV HBM.

Applications of the MAP6KE75AE3 include overvoltage transient protection of data lines on personal computers, data and signal lines on equipment, and system level and board level protection. It can also be used to protect LED drivers, touch panels, and touchscreen controllers, as well as communication ports such as HDMI, DVI, and USB3.0 ports.

The MAP6KE75AE3 is designed to be used as a general-purpose transient voltage suppressor. It has a fast-acting response to both positive and negative transient voltage surges, and it is capable of dissipating up to 800W of power in the event of an overvoltage condition. The device is designed to have a low dynamic resistance and low capacitance, ensuring that noise is reduced to a minimum. Furthermore, the device is ESD compliant, meaning that it has a high ESD withstand voltage rating.

In terms of its working principle, the MAP6KE75AE3 is designed to act as a sacrificially ‘burnable’ device. In the event of an overvoltage surge, the device is designed to absorb the energy and self-destruct, protecting the underlying circuit from damage.

The MAP6KE75AE3 is also designed to have a low capacitance, meaning that the speed of the signal transmission is preserved and the performance of the underlying circuit is maximized. Furthermore, the device also has a low dynamic resistance; ensuring that the level of noise due to the overvoltage surge is kept to a minimum.

Overall, the MAP6KE75AE3 is a low-capacitance unidirectional TVS diode designed for overvoltage protection of high-speed data lines. It is designed to have a fast-acting response to both positive and negative transient voltage surges, and it is capable of dissipating up to 800W of power to protect underlying circuits. It is also designed to have a low capacitance, which allows for high-speed data transmission, and a low dynamic resistance, which helps to reduce the level of noise generated due to the overvoltage surge.

The specific data is subject to PDF, and the above content is for reference

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