MAX383ESE

Voltage - Supply, Dual (V±):	±3 V ~ 8 V
Supplier Device Package:	16-SO
Package / Case:	16-SOIC (0.154", 3.90mm Width)
Operating Temperature:	-40°C ~ 85°C (TA)
Crosstalk:	-90dB @ 1MHz
Current - Leakage (IS(off)) (Max):	200pA
Channel Capacitance (CS(off), CD(off)):	12pF, 12pF
Charge Injection:	2pC
-3db Bandwidth:	--
Switch Time (Ton, Toff) (Max):	175ns, 100ns
Series:	--
Voltage - Supply, Single (V+):	3 V ~ 15 V
Channel-to-Channel Matching (ΔRon):	500 mOhm
On-State Resistance (Max):	35 Ohm
Number of Circuits:	2
Multiplexer/Demultiplexer Circuit:	2:1
Switch Circuit:	SPDT
Part Status:	Obsolete
Packaging:	Tube

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Introduction

MAX383ESE is a low-power, low-voltage, single-pole/double-throw transmission gate switch which is ideally suited for data/address bus switching, analog switching and signal multiplexing applications. It is designed for usage in microprocessor and memory system. This component is intended for use with negative-voltage logic, but is also functional with positive voltage systems.

Design Benefits

The MAX383ESE provides a variety of design benefits in different applications. It helps to take advantage of its high-performance, low-voltage capabilities to save power, reduce component count, and conserve board space. The MAX383ESE offers fast switching, low on-resistance, low on-capacitance, good isolation, and low power consumption.

Application Field

MAX383ESE is suitable for address, data, and signal multiplexing applications. It is great for microprocessors and memory systems, as well as analog switching and ultra-high speed signal switching. It can also be used in low temperature applications where superior off-state leakage performance is required.

Working Principle

The MAX383ESE is a single-pole/double-throw (SPDT) transmission gate switch. It is a four terminal device composed of a pair of CMOS transmission gates connected in series and driven by an enable input (EN). When EN is low, the internal N-channel MOSFETs fully enhance and the MAX383ESE conducts the signal from its A port to the B port. When EN is high, the internal P-channel MOSFETs fully enhance and the MAX383ESE conducts the signal from its B port to the A port. The MAX383ESE also has a low RON of 8.2Ω and a CISS of 200pF which is suitable for high-bandwidth applications. In addition, it can operate with up to 4.5V logic levels, which makes it ideal for low voltage applications.

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