MCQ4407-TP Allicdata Electronics
Allicdata Part #:

MCQ4407-TPMSTR-ND

Manufacturer Part#:

MCQ4407-TP

Price: $ 0.15
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: P-CHANNEL MOSFET, SOP-8 PACKAGE
More Detail: P-Channel 30V 12A (Ta) 1.4W (Ta) Surface Mount 8-S...
DataSheet: MCQ4407-TP datasheetMCQ4407-TP Datasheet/PDF
Quantity: 1000
4000 +: $ 0.13476
Stock 1000Can Ship Immediately
$ 0.15
Specifications
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 1.4W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 17 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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A Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) is a type of field-effect transistor (FET) that uses metal oxide as an insulator between the semiconductor channel and the gate conductor. This configuration allows the device to control current flow by varying the voltage on the gate. The MCQ4407-TP is a particular model of MOSFET, designed for use in high-power switching applications.

The MCQ4407-TP is a high-power N-channel MOSFET, meaning that the output of the device is connected to the N-type side of the semiconductor channel. This type of MOSFET is often used in switching applications, as it is able to move a large amount of current with a relatively low gate voltage. Due to its high-power capabilities, it is often used in power supplies, motor drivers, and other applications that require high efficiency and low power loss.

The MCQ4407-TP has a maximum channel voltage of 40 volts and a maximum channel current of 4.5 amps. It has a drain-gate breakdown voltage of 100 volts and a maximum drain-source voltage of 25 volts. These specifications make it suitable for a variety of applications, as it is able to operate at a wide range of voltages and currents. Additionally, the device is able to handle temperatures up to 150°C.

The MCQ4407-TP has a unique conduction characteristic, which is referred to as the "enhancement-mode" operation. In this mode, the device is able to move large amounts of current without requiring a large gate voltage. This is achieved by using a special structure which uses a thin oxide layer to control the flow of current. The oxide layer acts as an insulator, so it is able to block current from flowing until a certain threshold voltage is applied. Once the threshold voltage has been reached, the oxide layer becomes thin enough for current to flow. This allows the device to operate more efficiently, since only the required amount of gate voltage needs to be applied in order to achieve the desired current.

The MCQ4407-TP is available in a variety of packages, including a TO-252 (DPak) package and a TO-220 package. Both packages are suitable for surface-mount applications, and they offer good thermal conduction properties. Additionally, the TO-220 package features a built-in heatsink, which can be used to dissipate heat generated by the device during operation.

In summary, the MCQ4407-TP is a high-power N-channel MOSFET, designed for use in high-power switching applications. It has a unique enhancement-mode operation, which allows it to move large amounts of current with a small gate voltage. Additionally, it is available in a variety of packages, and it is able to handle temperatures up to 150°C. The MCQ4407-TP is an ideal choice for power supplies, motor drivers, and other applications that require high efficiency and low power loss.

The specific data is subject to PDF, and the above content is for reference

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