MCQ4822-TP Allicdata Electronics
Allicdata Part #:

MCQ4822-TPMSTR-ND

Manufacturer Part#:

MCQ4822-TP

Price: $ 0.15
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: N-CHANNEL MOSFET, SOP-8 PACKAGE
More Detail: N-Channel 30V 8.5A (Ta) 1.4W (Ta) Surface Mount 8-...
DataSheet: MCQ4822-TP datasheetMCQ4822-TP Datasheet/PDF
Quantity: 4000
4000 +: $ 0.13476
Stock 4000Can Ship Immediately
$ 0.15
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Power Dissipation (Max): 1.4W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 26 mOhm @ 6A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The MCQ4822-TP is part of the family of MOSFETs, which stands for metal oxide semiconductor field-effect transistor. They are transistors that use indirect control of the current between the source and drain electrodes. This technology provides low capacitive loading and low ON resistance which make them well suited to applications such as power management in motor control, digital circuits, and audio amplifiers.

MOSFETs have an insulated gate, its purpose is to control the current flowing between the source and drain. This gate has very low capacitive loading, meaning that the output current is almost independent of the input current. Additionally, when the gate voltage is reduced, the resistance between the source and drain also decreases, causing current to flow. This makes the MOSFET ideal for low power applications such as switching circuits and audio amplifiers.

The MCQ4822-TP has the same features as other MOSFETs, but with a higher operating power and higher peak power limit. It is ideal for applications such as motor control, power management, and audio amplifier design. Additionally, the MCQ4822-TP has a larger voltage and drain to source breakdown voltage than other MOSFETs, making it suitable for use in higher power circuits.

In motor control applications, the MCQ4822-TP can be used to switch higher voltage and current loads. This MOSFET is configured as an N-channel switch, which means that it can be used to switch between two different voltage levels. When used in this manner, the MCQ4822-TP provides fast switching times and low on-resistance. It is well suited for applications such as half -bridge and full-bridge motor control.

The MCQ4822-TP is also well suited for power management applications, as it provides low power loss and high efficiency. It can be used to switch between two different voltage levels, resulting in reduced power usage. Additionally, the MOSFET has a high breakdown voltage, meaning that it can be used in applications that require high voltages. This makes it ideal for applications such as DC/DC converters, motor control systems, and power switching circuits.

The MCQ4822-TP is also well suited for audio amplifier design, as its low capacitive loading and low on-resistance provide high audio fidelity. Additionally, this MOSFET can be used to switch between two different voltage levels, allowing for greater flexibility in designing audio amplifiers. This makes the MCQ4822-TP ideal for use in car audio systems, home theatre systems, and other high fidelity audio applications.

The MCQ4822-TP is an ideal choice for a wide range of applications due to its low power consumption, low capacitive loading, and fast switching times. Its large voltage and drain to source breakdown voltage also make it suitable for use in high power circuits, making it versatile for a variety of applications. Whether it is used in motor control, power management, or audio amplifier design, the MCQ4822-TP is a reliable and efficient MOSFET.

The specific data is subject to PDF, and the above content is for reference

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