MCQ4435-TP Allicdata Electronics
Allicdata Part #:

MCQ4435-TPMSTR-ND

Manufacturer Part#:

MCQ4435-TP

Price: $ 0.11
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: P-CHANNEL MOSFET, SOP-8 PACKAGE
More Detail: P-Channel 30V 9.1A (Tj) 1.4W (Tj) Surface Mount 8-...
DataSheet: MCQ4435-TP datasheetMCQ4435-TP Datasheet/PDF
Quantity: 4000
4000 +: $ 0.09563
Stock 4000Can Ship Immediately
$ 0.11
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.4W (Tj)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 24 mOhm @ 9.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 9.1A (Tj)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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Transistors are vital in many types of electronics and power supplies. They can be used to control electric current, amplify signals, and regulate voltages in applications such as radio frequencies and industrial equipment. FETs (Field Effect Transistors) and MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) are two type of transistors which function similarly, though the design and features differ. MCQ4435-TP is a single MOSFET whose application field and working principal will be explained in this article.

The MCQ4435-TP is a single N-channel, 60V, 0.095 ohm, and power dissipation of 11W MOSFET. It has very low ON Resistance (RDSon) making it ideal for applications requiring switching or amplification. The ON Resistance is 0.095 ohm which is very low compared to other similar FETs or MOSFETs. This makes it well-suited for high frequency applications such as motor control, power switches, and audio amplifiers. It is also suitable for load switch designs because of its low ON Resistance and high power dissipation rating. Additionally, it has a drain current of 33A which is also higher than other similar components.

The MCQ4435-TP is constructed using a number of features that make it suitable for the purpose of switching. The FET is made of the most advanced silicided epitaxial process technology, which produces excellent physical and electrical characteristics. Additionally, it has a low gate charge for increased switching speeds, a low body diode reverse recovery time, a low CISS and COSS, and an internal fast body diode that clamps inductive kickbacks. Moreover, it exhibits extremely low gate-bias thresholds which allows it to operate at low voltage levels.

The operation of the MOSFET works by allowing current to flow between a source and a drain. The gate of the FET acts as a control, regulating the flow of electrons. When voltage is applied to the gate, the transistor is turned "ON" and current flows between the source and the drain. When the gate voltage is removed (grounded or shorted to the source), the transistor is turned "OFF" and current does not flow between the two terminals. This makes the MCQ4435-TP well-suited for applications requiring switching or amplification with high frequencies.

The MCQ4435-TP is a single MOSFET transistor that is well-suited for applications requiring switching or amplification. It has a low ON Resistance, a drain current of 33A, and a power dissipation rating of 11W. These features, combined with its advanced silicided epitaxial process technology, make it an excellent choice for applications such as motor control, power switches, and audio amplifiers. Additionally, it has a low gate-bias thresholds which allows it to operate at low voltage levels, making it a strong choice for load switch designs.

The specific data is subject to PDF, and the above content is for reference

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