
Allicdata Part #: | MCQ4410-TPMSTR-ND |
Manufacturer Part#: |
MCQ4410-TP |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Micro Commercial Co |
Short Description: | N-CHANNEL MOSFET, SOP-8 PACKAGE |
More Detail: | N-Channel 30V 7.5A (Ta) 1.4W (Ta) Surface Mount 8-... |
DataSheet: | ![]() |
Quantity: | 1000 |
4000 +: | $ 0.09563 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOP |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.4W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 9130pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 13.5 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.5A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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MCQ4410-TP is a type of short channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is capable of supplying currents up to almost 2.7mA and is used in a variety of applications, including low noise amplifier design, power management and analog/digital circuitry. The MCQ4410-TP also boasts an impressive on-resistance of 10Ω, providing a good level of power efficiency.
The MCQ4410-TP device includes a MOSFET and a P-channel junction field-effect transistor (JFET). This unique combination of devices allows for greater flexibility and improved performance when compared to other MOSFETs. The device may be used in a variety of applications, such as power switching, level shifting, amplification, and switching drive circuits.
The operating principle of the MCQ4410-TP is based on the MOSFET structure. In short, the MCQ4410-TP consists of a metal oxide semiconductor (MOS) substrate and a gate electrode. The gate electrode is used to control the conductivity of the underlying semiconductor material. When a voltage is applied to the gate electrode, a current will flow between the source and drain of the device. This current is proportional to the voltage applied to the gate.
The P-channel JFET works in conjunction with the MOSFET to provide additional control and increased performance. The JFET works by modulating the current flow between the source and drain of the MOSFET. When a voltage is applied to the gate of the JFET, a current is created that is proportional to the level of voltage applied. This current acts to further control and manage the current flow of the MOSFET.
In order to achieve the highest performance, both the MOSFET and JFET must be precisely adjusted and configured for the particular application. The output characteristics of the MCQ4410-TP will vary depending on the input signal and the configuration of the device itself. For example, the MCQ4410-TP can be used as an amplifier by controlling the voltage at the gate of the MOSFET and JFET, or it can be used as a switch by adjusting the supply voltage and gate threshold.
Overall, the MCQ4410-TP has a wide range of applications due to its unique single device combination and its small size. The device is often used in low noise amplifier applications, power management switches, level shifting circuits, and drive circuits. Due to its low on-resistance and highly efficient power consumption, the MCQ4410-TP is an excellent choice for a variety of applications.
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