MJB41CG Allicdata Electronics
Allicdata Part #:

MJB41CGOS-ND

Manufacturer Part#:

MJB41CG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 100V 6A D2PAK
More Detail: Bipolar (BJT) Transistor NPN 100V 6A 3MHz 2W Surfa...
DataSheet: MJB41CG datasheetMJB41CG Datasheet/PDF
Quantity: 1455
Stock 1455Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 6A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Power - Max: 2W
Frequency - Transition: 3MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Base Part Number: MJB41
Description

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The MJB41CG is a single bi-polar junction transistor with a current gain cutoff frequency of 300MHz. It is designed for high-frequency, high-voltage, and high-current applications. It is used in power amplifier circuits and in switching applications that require fast switching characteristics.

A bipolar junction transistor is a three-terminal semiconductor device formed by two pieces of a semiconductor material. By applying a voltage to a control electrode, the current flowing between two other electrodes (the emitter and collector) can be controlled. This is due to the junctions between the two pieces of semiconductor material allowing current to flow in one direction but not the other, depending on the voltage applied to the control electrode.

The MJB41CG has a maximum current gain of 30 and can handle a maximum forward voltage of 80V. It has a minimum current gain of 10 and a maximum operating frequency of 350MHz. The power dissipation for this transistor is 1.4W. It can operate at temperatures ranging from -55°C to +150°C.

The MJB41CG is typically used for its fast switching capability and is suitable for a wide range of switching applications, such as motor drive circuits, power supplies, and switching power amplifiers. It is also used to control high-frequency signals, such as those used in radio communications. It can also be used in RF power amplifiers and other RF circuits.

The working principle of the MJB41CG is based on its bi-polar junction configuration. When a voltage is applied to the emitter, a small current flows through the base of the transistor. As the base current increases, the current through the collector increases and the voltage between emitter and collector decreases. This reduces the voltage differential between the collector and emitter, which causes the current gain of the transistor to decrease. This change of current gain is used to regulate the current through the collector which controls the output of the transistor.

The MJB41CG can also be used in an amplifier circuit to boost the signal level. In this configuration, the base current is changed in order to increase the Collector to Emitter Voltage. This in turn increases the current gain, resulting in an amplified signal.

Overall, the MJB41CG is a versatile transistor that can be used for a wide range of applications, from low-frequency signal amplification to fast-switching in motor drives and power supplies. Its wide operating range makes it suitable for a variety of applications, and its high current gain and fast switching characteristics make it an ideal choice for high-efficiency circuits. The MJB41CG is an excellent choice for a variety of power applications.

The specific data is subject to PDF, and the above content is for reference

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