MJB44H11 Allicdata Electronics
Allicdata Part #:

MJB44H11OS-ND

Manufacturer Part#:

MJB44H11

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 80V 10A D2PAK
More Detail: Bipolar (BJT) Transistor NPN 80V 10A 50MHz 2W Surf...
DataSheet: MJB44H11 datasheetMJB44H11 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Power - Max: 2W
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Base Part Number: MJB44H11
Description

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The MJB44H11 is a high-power NPN transistors of the Bipolar Junction Transistor (BJT) variety. It is classified under a single transistor and can be used for a variety of applications, including amplifiers, switching applications, inverters, and level-shifters, just to name a few. The MJB44H11 is compatible with commercial power-supplies and requires various voltages to function.

The MJB44H11 has several important characteristics that set it apart from other types of BJTs. First, it has high-voltage ratings (both VCE and VBE) that allow it to operate with higher voltages than other types of BJTs. It also has high maximum collector-to-emitter voltage ratings and high collector-to-base voltage ratings. In addition, the MJB44H11 has a low saturation voltage, which makes it ideal for applications where low power dissipation is important.

The MJB44H11 has several applications depending on the needs of the user. It is suitable for amplifier and switching applications due to its high voltage ratings and low saturation voltage. The MJB44H11 is also compatible with different power-supplies, which makes it well suited for inverter and level-shifter applications. It also has a low current gain bandwidth and is suitable for applications where high-bandwidth is required.

The working principle of the MJB44H11 is relatively simple. When a voltage is applied to the collector-emitter (VCE) of the transistor, the base-emitter junction operates as a diode and conducts current. This current, called the base current (IB), then charges the base, which in turn increases the current flow from the collector to the emitter (IC). This is known as the transistor action and is the basic principle of its operation.

In conclusion, the MJB44H11 is a single transistor that has a number of applications. Its high voltage ratings and low saturation voltage make it suitable for amplifier and switching applications, and its compatibility with different power-supplies makes it ideal for inverter and level-shifter applications. In addition, its working principle is based on the transistor action, which is the basic principle of its operation. All of these characteristics make the MJB44H11 an ideal choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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