MJB45H11T4G Allicdata Electronics

MJB45H11T4G Discrete Semiconductor Products

Allicdata Part #:

MJB45H11T4GOSTR-ND

Manufacturer Part#:

MJB45H11T4G

Price: $ 0.49
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 80V 10A D2PAK-3
More Detail: Bipolar (BJT) Transistor PNP 80V 10A 40MHz 2W Surf...
DataSheet: MJB45H11T4G datasheetMJB45H11T4G Datasheet/PDF
Quantity: 2400
800 +: $ 0.44869
1600 +: $ 0.35424
2400 +: $ 0.33062
5600 +: $ 0.31487
Stock 2400Can Ship Immediately
$ 0.49
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Power - Max: 2W
Frequency - Transition: 40MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Base Part Number: MJB45H11
Description

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The MJB45H11T4G is a single high-voltage Bipolar Junction Transistor (BJT) from the NPN series. This Silicon Junction transistor is designed for use in high voltage applications, enabling operation at voltages up to 70V, with a collector current rating of 4A. The operation of the device is simple: the collector current is generated by the base current, and the device can be used as a current amplifier.

The MJB45H11T4G is widely used in a variety of applications. It is used in amplifiers, voltage regulators, motor control circuits, switch mode power supplies and general purpose switching circuits. It is also used in high voltage applications such as transformer-coupled amplifiers and power transistors.

The device is ideally suited for use as a current amplifier, as it operates with low collector-emitter voltage drop, making it ideal for use in high-voltage applications. The device has a low noise performance, which is advantageous for use in signal processing circuits. Additionally, the device has a low thermal resistance, making it suitable for use in a number of high-power applications.

The working principle of the MJB45H11T4G is simple and straightforward. When base current is applied, the device allows collector current to flow. This collector current is then amplified by the collector-base voltage, thus providing the amplification of the current. Additionally, the device can also be used as an amplifier in a circuit as it provides a low collector-emitter voltage drop.

The device can be used in conjunction with a base resistor to further increase the current gain. This is known as the Darlington pair configuration. The device is also protected against short-circuits and electrostatic discharges, ensuring a high reliability performance. Additionally, the device is protected against temperature changes and surges, providing a highly reliable operation.

The MJB45H11T4G is an excellent device for a variety of high voltage applications. It is suitable for current and voltage amplifiers, motor controls, and switch mode power supplies. Furthermore, it is also advantageous for use in high power applications. Additionally, the device is protected from short circuits and static electricity, and is capable of providing a reliable performance in temperature and surge conditions.

The specific data is subject to PDF, and the above content is for reference

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