
Allicdata Part #: | MJB45H11-ND |
Manufacturer Part#: |
MJB45H11 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 80V 10A D2PAK-3 |
More Detail: | Bipolar (BJT) Transistor PNP 80V 10A 40MHz 2W Surf... |
DataSheet: | ![]() |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 10A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 400mA, 8A |
Current - Collector Cutoff (Max): | 10µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 4A, 1V |
Power - Max: | 2W |
Frequency - Transition: | 40MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Base Part Number: | MJB45H11 |
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The MJB45H11 is a high power Darlington silicon NPN transistor. It is classed as a type of Single Bipolar (BJT) transistor. The power transistor is specifically designed for applications requiring high current and high voltage such as UHF amplifiers and power switching circuits in audio amplifiers and automotive applications.
The MJB45H11 uses their high gain darlington configuration to offer improved gain, power transfer and higher frequency capabilities. This power transistor is capable of producing an output current of up to 10A at a voltage of 45V and is designed to handle total dissipation of 40W. The high frequency gain of the MJB45H11 is at least 10 dB greater than a standard bipolar transistor. It also has a high voltage capability of 130v.
The MJB45H11 has a working principle that is based on the principle of injection of charge carriers. Charge carriers, either electrons or holes, are injected into a semiconductor material from an external source. This injection of charge creates an electric field that governs the motion of the charge carriers, and the amount of current flowing through the device. This process is known as a bipolar junction transistor (BJT). In the BJT, the charge carriers are injected alternately into the emitter and the collector, creating an alternating electric field. This field permits control of the charge carriers in the two regions, so that they can be used to amplify an incoming signal.
The MJB45H11 offers stability for power switching applications at higher frequencies and temperature, as well as providing minimal current drain. Its package is designed for efficient thermal and electrical performance. The device is typically used as an amplifier, power switch, output driver, or voltage regulator and is ideal for use in automotive and audio applications.
The MJB45H11 is a versatile and dependable power transistor which can easily be used in a wide variety of applications. It has a high current capability, allowing it to handle large amounts of power. Its high voltage capabilities make it useful for applications such as switching power supplies, audio amplifiers and UHF amplifiers. Additionally, it offers excellent thermal and electrical performance, making it an ideal choice for power switching and voltage regulator applications.
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