MJB45H11 Allicdata Electronics
Allicdata Part #:

MJB45H11-ND

Manufacturer Part#:

MJB45H11

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 80V 10A D2PAK-3
More Detail: Bipolar (BJT) Transistor PNP 80V 10A 40MHz 2W Surf...
DataSheet: MJB45H11 datasheetMJB45H11 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Power - Max: 2W
Frequency - Transition: 40MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Base Part Number: MJB45H11
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MJB45H11 is a high power Darlington silicon NPN transistor. It is classed as a type of Single Bipolar (BJT) transistor. The power transistor is specifically designed for applications requiring high current and high voltage such as UHF amplifiers and power switching circuits in audio amplifiers and automotive applications.

The MJB45H11 uses their high gain darlington configuration to offer improved gain, power transfer and higher frequency capabilities. This power transistor is capable of producing an output current of up to 10A at a voltage of 45V and is designed to handle total dissipation of 40W. The high frequency gain of the MJB45H11 is at least 10 dB greater than a standard bipolar transistor. It also has a high voltage capability of 130v.

The MJB45H11 has a working principle that is based on the principle of injection of charge carriers. Charge carriers, either electrons or holes, are injected into a semiconductor material from an external source. This injection of charge creates an electric field that governs the motion of the charge carriers, and the amount of current flowing through the device. This process is known as a bipolar junction transistor (BJT). In the BJT, the charge carriers are injected alternately into the emitter and the collector, creating an alternating electric field. This field permits control of the charge carriers in the two regions, so that they can be used to amplify an incoming signal.

The MJB45H11 offers stability for power switching applications at higher frequencies and temperature, as well as providing minimal current drain. Its package is designed for efficient thermal and electrical performance. The device is typically used as an amplifier, power switch, output driver, or voltage regulator and is ideal for use in automotive and audio applications.

The MJB45H11 is a versatile and dependable power transistor which can easily be used in a wide variety of applications. It has a high current capability, allowing it to handle large amounts of power. Its high voltage capabilities make it useful for applications such as switching power supplies, audio amplifiers and UHF amplifiers. Additionally, it offers excellent thermal and electrical performance, making it an ideal choice for power switching and voltage regulator applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "MJB4" Included word is 13
Part Number Manufacturer Price Quantity Description
MJB41CG ON Semicondu... -- 1455 TRANS NPN 100V 6A D2PAKBi...
MJB44H11T4G ON Semicondu... -- 3200 TRANS NPN 80V 10A D2PAK-3...
MJB41C ON Semicondu... 0.0 $ 1000 TRANS NPN 100V 6A D2PAKBi...
MJB44H11T4-A STMicroelect... -- 2000 TRANS NPN 80V 10A D2PAK-3...
MJB42CT4G ON Semicondu... 0.49 $ 1600 TRANS PNP 100V 6A D2PAKBi...
MJB44H11T4 STMicroelect... -- 1000 TRANS NPN 80V 10A D2PAK-3...
MJB44H11 ON Semicondu... 0.0 $ 1000 TRANS NPN 80V 10A D2PAKBi...
MJB41CT4G ON Semicondu... -- 800 TRANS NPN 100V 6A D2PAK-3...
MJB45H11G ON Semicondu... 0.85 $ 171 TRANS PNP 80V 10A D2PAKBi...
MJB45H11 ON Semicondu... -- 1000 TRANS PNP 80V 10A D2PAK-3...
MJB44H11G ON Semicondu... 0.85 $ 999 TRANS NPN 80V 10A D2PAKBi...
MJB41CT4 ON Semicondu... 0.0 $ 1000 TRANS NPN 100V 6A D2PAK-3...
MJB45H11T4G ON Semicondu... 0.49 $ 2400 TRANS PNP 80V 10A D2PAK-3...
Latest Products
BC807-16W/MIX

GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...

BC807-16W/MIX Allicdata Electronics
CP547-MJ11015-CT

TRANS PNP DARL 30A 120V DIEBipolar (BJT)...

CP547-MJ11015-CT Allicdata Electronics
CP547-CEN1103-WS

TRANS PNP DARLINGTON DIEBipolar (BJT) Tr...

CP547-CEN1103-WS Allicdata Electronics
TIP35C SL

TRANS GENERAL PURPOSE TO-218Bipolar (BJT...

TIP35C SL Allicdata Electronics
JAN2N3634

TRANS PNP 140V 1ABipolar (BJT) Transisto...

JAN2N3634 Allicdata Electronics
BULB7216-1

TRANS NPN 700V 3A I2PAKBipolar (BJT) Tra...

BULB7216-1 Allicdata Electronics