MJB44H11T4 Allicdata Electronics

MJB44H11T4 Discrete Semiconductor Products

Allicdata Part #:

497-12849-2-ND

Manufacturer Part#:

MJB44H11T4

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: TRANS NPN 80V 10A D2PAK-3
More Detail: Bipolar (BJT) Transistor NPN 80V 10A 50W Surface ...
DataSheet: MJB44H11T4 datasheetMJB44H11T4 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Power - Max: 50W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Base Part Number: MJB44H11
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 10A
Description

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Transistors: Bipolar (BJT): Single

The MJB44H11T4 is a type of Bipolar Junction Transistor (BJT), a device so versatile it is used in an nearly infinite variety of circuits and applications. The MJB44H11T4 is an example of a single-transistor type, which means it consists of a single active layer of two pn-junctions. Despite the single layer of transistors, the type is capable of a variety of operations and performing a variety of functions depending on the circuit it is in and its parameters.

General Characteristics

The MJB44H11T4 is an NPN transistor, which means that its active layer is constructed from two P-type semiconductors and one N-type semiconductor. Specifically, the MJB44H11T4 uses a silicon substrate, an aluminum semiconductor, and a Pd semiconductor. The current gain (hFE) at a VCE of 2V and an IC of 200 mA is 55-185, and it has a VCE (Saturation) of 1.5V and a VBE (Saturation) of -1.5V. The device\'s maximum values are IC = 200 mA, VCE = 30V, Power Dissipation = 250 mW and hFE = 1000. The device is housed in a TO-92 package, is capable of a PD of 350 mW, and its maximum operating temperature is +150°C (+302°F).

Working Principle

The MJB44H11T4 is an NPN transistor, which acts as an active resistor. It contains three electrical terminals – the emitter, collector, and base – and operates by allowing current to flow from the base to collector when the voltage at the base is higher than the voltage at the emitter. When the voltage is lower than the voltage at the emitter, it does not allow current to flow. In NPN transistors, the base-collector flow creates a small amount of current, which creates current amplification; in the MJB44H11T4 this rate of current amplification is typically 200mA at a voltage of 2V.

Application Fields

The versatility of single-transistor BJT devices like the MJB44H11T4 makes them applicable in many applications. They\'re commonly used in logic circuits and analog amplifiers, providing amplification and isolation, as well as in oscillators, as a switching device and as a voltage regulator. They are also used in power supplies and current sensors, due to their very low power consumption, heat dissipation and size. At the same time, they can maintain a good signal quality, making them especially suitable for portable electronics.

The MJB44H11T4, in particular, is a small transistor, making it ideal for applications with space constraints, as it can be placed on small boards or in devices with limited space. Its wide current gain range also makes it suitable for a variety of applications and circuits, allowing it to be used as either an amplifier or as an oscillator. It is also effective at saving energy, as it has low power dissipation, allowing for small designs with little power consumption.

Overall, the MJB44H11T4 is a versatile single-transistor element, capable of a wide range of applications due its small size, low power consumption and wide current gain range. It is especially useful for small designs and applications with space constraints, making it a popular choice for modern electronics.

The specific data is subject to PDF, and the above content is for reference

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