
MJB41CT4G Discrete Semiconductor Products |
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Allicdata Part #: | MJB41CT4GOSTR-ND |
Manufacturer Part#: |
MJB41CT4G |
Price: | $ 0.46 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 100V 6A D2PAK-3 |
More Detail: | Bipolar (BJT) Transistor NPN 100V 6A 3MHz 2W Surfa... |
DataSheet: | ![]() |
Quantity: | 800 |
1 +: | $ 0.46000 |
10 +: | $ 0.44620 |
100 +: | $ 0.43700 |
1000 +: | $ 0.42780 |
10000 +: | $ 0.41400 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 6A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 600mA, 6A |
Current - Collector Cutoff (Max): | 700µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 15 @ 3A, 4V |
Power - Max: | 2W |
Frequency - Transition: | 3MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Base Part Number: | MJB41 |
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The MJB41CT4G is a general purpose NPN silicon transistor for a variety of electronic applications. It is one of many transistors that belong to the single bipolar junction transistor (BJT) category.
A BJT consists of three layers of doped silicon arranged in an alternating pattern, between the base and collector. When current is applied to the base layer, it effectively acts as a semiconductor and controls the amount of current that passes through the two other semiconductor layers. This is what allows a BJT to be used as an amplifier or switch in many electrical applications.
The MJB41CT4G is usually used as an audio amplifier, to amplify wirelessly transmitted signals such as telephone conversations and Internet signals, or as an amplifier within a number of consumer electronic products. It is also commonly used within commercial and industrial power circuits, where it is used to improve the performance of existing circuits by controlling the amount of current flow and compensation.
In terms of technical specifications, the MJB41CT4G has a collector current rating of 1.2A and maximum collector power dissipation of 300mW, which allows it to withstand higher voltages and currents than conventional transistors. It also has a maximum collector-emitter voltage of 200V and a maximum DC current gain of 500 which makes the MJB41CT4G suitable for a range of different applications.
In terms of how it works, the MJB41CT4G performs its function as an amplifier or switch by performing two main roles: current amplification and voltage switching. A small current is applied to the base to allow the transistor to work as an amplifier, allowing for greater current levels to flow through the collector-emitter and therefore increasing the voltage output. When enabled, the transistor can also act as a switch, allowing for an increased amount of current to flow through it, and thus providing an increased amount of control over an electrical circuit.
Overall, the MJB41CT4G is a versatile and useful transistor which allows engineers to control the current and voltage flow in a variety of electronic applications. It can be used for audio amplification, as well as in industrial power circuits and a range of other applications. It is designed to withstand high levels of current and voltage, making it a reliable and cost effective tool for many engineers.
The specific data is subject to PDF, and the above content is for reference
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