MJB45H11G Allicdata Electronics
Allicdata Part #:

MJB45H11GOS-ND

Manufacturer Part#:

MJB45H11G

Price: $ 0.85
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 80V 10A D2PAK
More Detail: Bipolar (BJT) Transistor PNP 80V 10A 40MHz 2W Surf...
DataSheet: MJB45H11G datasheetMJB45H11G Datasheet/PDF
Quantity: 171
1 +: $ 0.78120
10 +: $ 0.69615
100 +: $ 0.54287
500 +: $ 0.44845
1000 +: $ 0.35404
Stock 171Can Ship Immediately
$ 0.85
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Power - Max: 2W
Frequency - Transition: 40MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Base Part Number: MJB45H11
Description

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Transistors - Bipolar (BJT) - Single

MJB45H11G is a NPN power transistor in super-beta technology designed for a wide range of industrial, telecommunications, and automotive applications. It can operate in both switching and linear mode, and it is capable of handling extremely high currents. It is an incredibly durable component which is able to withstand up to 200A of typically high pulse currents.

Application Field and Working Principle

The MJB45H11G is widely used in applications where high-current, high-voltage and fast switching capabilities are required. It is suitable for use in lighting, motor control, and DC inductive drive, as well as in the telecommunication industry. As a switching transistor, it can be used to control the power being supplied to various loads, or to amplify low-power signals. It can also be used in linear operation for DC current control or voltage regulation.

The MJB45H11G is a NPN bipolar junction transistor (BJT), which is composed of three parts: the base, collector, and emitter. The device works by allowing a small current to be amplified through the base and outputted through the collector. The amount of current that is amplified is proportional to the voltage applied to the base. When the base is off, no current flows, and the transistor is in its ‘off’ state; when the base is switched ‘on’, a small current is allowed to flow, and the transistor is in its ‘on’ state. This process can be used to control the current flowing through the collector/emitter, which can be used as an amplifying device or a switch.

The MJB45H11G has a wide range of applications, where it can be used to provide high levels of power, current, voltage, and switching characteristics. This makes it an ideal choice for a wide variety of applications, including lighting, motor control, DC Inductive drives, and telecommunications.

Conclusion

The MJB45H11G is an incredibly robust and reliable transistor with a wide range of applications. It is capable of handling high current and voltage, and can operate in both switching and linear mode. The transistor works by allowing a small base current to be amplified, which can then be used to control the current flow through the collector/emitter. This makes it a highly useful component for a variety of uses, including in lighting, motor control, induction drives, and telecommunications.

Overall, the MJB45H11G is an ideal choice for applications where high performance, reliability, and durability are necessary. It is an incredibly versatile component which is capable of handling a wide variety of tasks and offers reliable operation over extended periods of time. As such, it is an incredibly useful tool which can offer high-quality performance in a variety of situations.

The specific data is subject to PDF, and the above content is for reference

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