MJB44H11T4-A Discrete Semiconductor Products |
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Allicdata Part #: | 497-15455-2-ND |
Manufacturer Part#: |
MJB44H11T4-A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | TRANS NPN 80V 10A D2PAK-3 |
More Detail: | Bipolar (BJT) Transistor NPN 80V 10A 50W Surface ... |
DataSheet: | MJB44H11T4-A Datasheet/PDF |
Quantity: | 2000 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 10A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 400mA, 8A |
Current - Collector Cutoff (Max): | 10µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 4A, 1V |
Power - Max: | 50W |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
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The MJB44H11T4-A is a single bipolar transistors (BJT) device with a wide range of applications. It is capable of handling power and voltage levels higher than those available with other devices. The device is designed to have low power consumption and high noise immunity, making it suitable for applications in a variety of industries.
The device is capable of handling currents up to 7A and voltages up to 20V. Its design uses a silicon-germanium collector layer, which is combined with the insulated gate bipolar transistor (IGBT) technology to provide efficient operation at high power and voltage levels. The device also features a low-voltage reset feature that can be used in safety-critical applications.
The working principle of the device is based on the flow of holes and electrons from the base to the collector and from the collector to the emitter. The device operates in three states: the forward-biased state, the reverse-biased state and the active region. In the forward-biased state, current passes freely through the device, allowing it to carry out its functions. In the reverse-biased state, current flows in the opposite direction and is blocked, preventing it from passing through the device. In the active region, current is focused on the emitter and collector, creating a controlled flow between them.
The MJB44H11T4-A is able to perform well in a variety of applications, such as power supplies, linear regulators, motor controls, power amplifiers, embedded controllers and more. It is also suitable for use in automotive, telecommunications and consumer electronics applications. The device is also commonly used in embedded systems where the operating temperature can reach 150 degrees Celsius.
The MJB44H11T4-A is a robust and reliable device, providing many benefits over other transistors. Its high voltage, high current, and fast switching capabilities make it an ideal choice for many applications. It\'s also easy to use, making it a popular device for engineers and other professionals.
The specific data is subject to PDF, and the above content is for reference
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