![MMBTH10-7-F Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | MMBTH10-FDITR-ND |
Manufacturer Part#: |
MMBTH10-7-F |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN VHF/UHF 25V SOT23-3 |
More Detail: | RF Transistor NPN 25V 50mA 650MHz 300mW Surface Mo... |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 0.02898 |
6000 +: | $ 0.02520 |
15000 +: | $ 0.02142 |
30000 +: | $ 0.02016 |
75000 +: | $ 0.01890 |
150000 +: | $ 0.01638 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 25V |
Frequency - Transition: | 650MHz |
Noise Figure (dB Typ @ f): | -- |
Gain: | -- |
Power - Max: | 300mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 4mA, 10V |
Current - Collector (Ic) (Max): | 50mA |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | MMBTH10 |
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MMBTH10-7-F is a transistor, specifically a Bipolar Junction Transistor (BJT), used in Radio Frequency (RF) applications. It is manufactured by Diodes Incorporated, using their PD6001 process. It is a PNP low-frequency device intended for general purpose applications, with a maximum current rating of 1.5A and a maximum voltage rating of 40V. The device comes in an industry standard SOT-223 package, making it easy to use in various configurations in electronic circuits.
The MMBTH10-7-F is a general purpose device with many applications, such as amplification and switching. As it is a low-frequency device, its frequency range is limited to up to a few hundred KHz. Its breakdown voltage is 40V, making it suitable for use in low voltage, low power circuits. Its power gain is typically in the range of 15-20dB at 100KHz. Due to its low power gain, it is most suitable for low power applications, such as in audio amplifier circuits and RF switch circuits.
The working principle of the MMBTH10-7-F is based on the basic principles of BJTs. A BJT is a type of transistor that has three terminals, namely the base, collector, and emitter. The current flow through the device is controlled by applying a voltage to the base terminal, which in turn controls the current passing through the collector and emitter. The current at the collector is proportional to the current at the emitter, and the ratio between the two can be controlled with the base current. The base current is typically much smaller than the collector current, allowing for amplification of the signal.
The MMBTH10-7-F has three terminals, and the electrical characteristics of the device depend on the particular circuit it is used in. For example, in a common emitter configuration, the device acts as a voltage amplifier, while in a common collector configuration, it acts as a current amplifier. The current gain of the device also depends on the type of configuration and the circuit design. It can typically provide current gains of up to 200. The device can also be used as an oscillator or a switch, depending on the circuit design. The device is heavily used in audio amplifier circuits and RF switch circuits, due to its low power gain and low voltage rating.
In summary, the MMBTH10-7-F is a general purpose Bipolar Junction Transistor (BJT) used mainly for its low power and low voltage ratings. It can be used in many different configurations, from voltage amplifiers to oscillators and switches. Its frequency range is limited to a few hundred KHz, and its maximum current rating is 1.5A. The device comes in an industry standard SOT-223 package, making it easy to use in various circuits. Thus, the MMBTH10-7-F is ideal for low power applications, such as audio amplifiers and RF switches.
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