Allicdata Part #: | MMBT2222LT3-ND |
Manufacturer Part#: |
MMBT2222LT3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 30V 0.6A SOT-23 |
More Detail: | Bipolar (BJT) Transistor NPN 30V 600mA 250MHz 300m... |
DataSheet: | MMBT2222LT3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 600mA |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 1.6V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 10nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 10V |
Power - Max: | 300mW |
Frequency - Transition: | 250MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Base Part Number: | MMBT2222 |
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The MMBT2222LT3, also commonly known as a 2222A transistor, is an NPN bipolar junction transistor (BJT) designed for general purpose applications. It works similarly to other BJTs, by controlling the current flow between the collector and the emitter. This device offers a wide range of features, allowing it to be used for numerous applications, from amplifying signals to switching circuits.
Features
The MMBT2222LT3 offers a variety of features that make it suitable for a wide range of applications. These features include high gain, low noise, good switching speed and breakdown voltage, and low power consumption. All of these features make the 2222A an efficient device for many different applications.
Power Rating and Operating Conditions
The MMBT2222LT3 has a maximum power rating of 600mW, and can be used at up to 100V. It can also operate at temperatures up to 150°C. These operational conditions provide the device with the flexibility to be used in a variety of applications.
Package
The MMBT2222LT3 comes in a variety of packages. It is most commonly found in the TO-92 package, with others such as the SOT-323, SOT-89, and SOT-223 packages also available. The package type should be selected based on the application and the desired use of the device.
Applications
The MMBT2222LT3 can be used for a variety of applications, from low-power amplifiers to high-power switching circuits. It is suitable for use in a wide range of electronic circuits, including RF amplifiers, low-frequency amplifiers, and low-noise amplifiers. The MMBT2222LT3 can also be used as a switch, allowing it to be used in a variety of logic-level applications.
Working Principle
The MMBT2222LT3 works on the principle of a bipolar junction transistor (BJT). The device consists of two p-type and one n-type semiconductor regions, which are arranged to form a semiconductor junction. When an input voltage is applied to the base of the transistor, it allows current to flow from the collector to the emitter when it is turned on. This current is regulated by the base-emitter voltage, allowing a current gain. This current gain is the amount of current flowing from the collector to the emitter, which is proportional to the base current. This allows the device to be used as an amplifier or a switch.
Conclusion
The MMBT2222LT3 is a versatile bipolar junction transistor that can be used for a variety of applications. With its wide range of operational conditions and package options, it can be used in many different circuits. Its low power consumption and high gain make it an efficient device for both amplifying signals and switching circuits. Finally, its working principle is simple to understand and it can be used to control current flow in a variety of ways.
The specific data is subject to PDF, and the above content is for reference
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