MMBT5551-7-F Allicdata Electronics
Allicdata Part #:

MMBT5551-FDITR-ND

Manufacturer Part#:

MMBT5551-7-F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN 160V 0.6A SOT23-3
More Detail: Bipolar (BJT) Transistor NPN 160V 600mA 300MHz 300...
DataSheet: MMBT5551-7-F datasheetMMBT5551-7-F Datasheet/PDF
Quantity: 39000
Stock 39000Can Ship Immediately
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Power - Max: 300mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: MMBT5551
Description

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MMBT5551-7-F Application Field and Working Principle

A MMBT5551-7-F Bipolar Junction Transistor (BJT) is a small signal transistor with a high current density and low cost, which makes it suitable for a variety of applications. The MMBT5551-7-F is commonly used as a general purpose switching device, particularly in digital circuits. This article will discuss the application field and working principle of an MMBT5551-7-F.

MMBT5551-7-F Application Field

The MMBT5551-7-F is a small signal transistor with several features that make it well-suited to a variety of applications. Its very high current density makes it ideal for use in high speed, low power, and precision circuits. The device has a maximum DC current rating of 250 mA, which allows for the use of larger transistors for higher power requirements. Additionally, it has a large operating range and can be used in both low frequency and high frequency applications. The MMBT5551-7-F is commonly used as a general purpose switching device, particularly in digital circuits. It can also be used as an amplifier in some applications, due to its low collector-emitter saturation voltage and high input impedance. Additionally, the MMBT5551-7-F is particularly useful in automotive applications, such as electric and ignition systems, due to its high temperature operation and low threshold voltage.

MMBT5551-7-F Working Principle

The MMBT5551-7-F is a single-transistor, three-terminal device consisting of an emitter, base, and collector. It operates based on the principle of a BJT, which can be described as a controllable current regulator. At low voltages, the p-n junction of the BJT is dominated by a depletion region, which restricts current flow from the collector to the emitter. At higher voltages, this depletion region becomes smaller and less restrictive, allowing the BJT to conduct current from the collector to the emitter. This change in the device\'s resistance is controlled by the voltage applied to the base terminal, which affects the depth of the depletion region. This allows for precise control of the current conducted from the collector to the emitter.

Conclusion

The MMBT5551-7-F is a small signal Bipolar Junction Transistor (BJT) that is used in a variety of applications. Its very high current density makes it suitable for high speed, low power, and precision circuits. The MMBT5551-7-F operates based on the principle of a BJT, which is essentially a controllable current regulator. The base voltage controls the depth of the depletion region, which in turn regulates the current conducted from the collector to the emitter. The MMBT5551-7-F is suitable for a variety of applications, including general purpose switching, amplification, and automotive applications.

The specific data is subject to PDF, and the above content is for reference

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