MMBTA14LT1G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN - Darlington
Current - Collector (Ic) (Max):	300mA
Voltage - Collector Emitter Breakdown (Max):	30V
Vce Saturation (Max) @ Ib, Ic:	1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	20000 @ 100mA, 5V
Power - Max:	225mW
Frequency - Transition:	125MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3 (TO-236)
Base Part Number:	MMBTA14

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MMBTA14LT1G Application Field and Working Principle

The MMBTA14LT1G is a single-bipolar transistor which is the key component of many computer systems and electronics. This type of transistor is commonly used because it has a high power and voltage conversion efficiency, which makes it suitable for applications where reliable and energy-efficient operations are required. In addition, the MMBTA14LT1G features a low noise characteristic and is also easy to integrate with other active components in the circuit.MMBTA14LT1G is widely used in communications and amplifying applications. It is used in bluetooth headphones and other wireless communication systems, enabling noise cancellation. It is also used in amplifier modules, providing the basis for efficient signal amplification. This transistor is used in many military and medical applications, making it suitable for application in high-end systems.The MMBTA14LT1G can also be used in circuits used for power-supply applications, including DC/DC converters and power supplies. DC/DC converters require high frequency switching transistor to convert the DC input voltage to either a higher or lower one. The MMBTA14LT1G is used in circuits such as VCO generators and clock generators, used to control the speed and timing of digital devices.The working principle of the MMBTA14LT1G is based on the basic bipolar junction transistor (BJT). A BJT consists of three layers of semiconductor material, two of which are doped to create two PN junctions. The purpose of the two PN junctions is to create the electrical effect of a switching transistor. When current flows from the base to the collector, the current gain increases rapidly, making this type of transistor suitable for use in switching applications.When operating in its active region, the MMBTA14LT1G can provide a current amplification of up to 300 times for a given input. The MMBTA14LT1G also offers good gain when used in circuits with high power demands, such as in high-end systems.To further increase its reliability, the MMBTA14LT1G is equipped with a low-offslow protection technology, which prevents the transistor from being damaged by the stray electric field emitted by surrounding components. This protection mechanism reduces the possibility of malfunctioning due to the application of reverse bias voltage, providing a high-quality performance even in unstable environments.In summary, the MMBTA14LT1G single-bipolar transistor is a high performance device commonly used in many circuits, especially systems that require a reliable and efficient operations, such as communications systems and power supplies. Its properties such as its high current amplification, low noise characteristic and its low-offsflow protection technology make it a preferred choice for electronic applications.

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