MMBTA93LT1 Allicdata Electronics
Allicdata Part #:

MMBTA93LT1-ND

Manufacturer Part#:

MMBTA93LT1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 200V 0.5A SOT-23
More Detail: Bipolar (BJT) Transistor PNP 200V 500mA 50MHz 300m...
DataSheet: MMBTA93LT1 datasheetMMBTA93LT1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 200V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Power - Max: 300mW
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Description

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The MMBTA93LT1 is a high-performance NPN low-power small signal transistor that has a variety of applications. It is a small, low-power, high-speed transistor and has excellent gain, current and high-frequency characteristics, making it ideal for use in high-speed logic circuits, power amplification and switching applications, and in high-frequency audio circuits. Its low-power design also allows for battery-powered applications. This transistor is part of a family of all-in-one solutions for different applications, including amplifiers and drivers, low-power and high-speed switches, multiplexers and demultiplexers, and transceivers.

The MMBTA93LT1 belongs in the Transistors - Bipolar (BJT) - Single category, which implies that it utilizes one layer of semiconductor material that forms a P-N junction. In this case, it is a NPN type, where the N material is connected to the positive terminal and the P material is connected to the negative terminal of the transistor. In such transistors, the emitter terminal is the N material side, while the collector and the base terminal represent P material, connected to the negative terminal. This arrangement forms the P-N-P or N-P-N junction responsible for the transistor\'s operation.

The working principle of a typical NPN transistor is based on the combined actions of the base and the collector current, along with the current flowing through the emitter between the collector and the base. The transferred current, known as the base current, is determined by the electron movement from the N material side (emitter) to the P material side (base) that forms the base current. As the current flowing from the emitter varies, the base current also varies and in turn, it determines the current flowing through the collector-base junction. In this manner, the collector current is controlled by the base current.

MMBTA93LT1 transistors offer many advantages, including high speed switching capability, excellent gain and current characteristics, good input voltage and current levels, low power dissipation, small size, and good reliability. These characteristics make the MMBTA93LT1 an ideal choice for a variety of applications, such as signal processing, logic circuits, audio circuits, and high-speed amplifiers and switches. In addition, the MMBTA93LT1 has a low-power design that can be utilized in battery-powered applications.

The MMBTA93LT1 is generally used for high-speed switching, signal processing, or high-frequency amplification and switching applications. Additionally, this transistor can be used for multiplexers, demultiplexers, and transceivers. Furthermore, due to its low power consumption, the MMBTA93LT1 can be utilized in battery powered applications, such as medical devices, automotive electronics, and communications equipment.

In conclusion, the MMBTA93LT1 is a high performance NPN low-power small signal transistor that is well suited for a wide range of applications. It belongs to the Transistors - Bipolar (BJT) - Single family and operates by utilizing a P-N-P or N-P-N junction. In addition, this small signal transistor has excellent gain, current, and high-frequency characteristics, making it suitable for use in various high-speed logic circuits and switching applications. In addition, its low power design makes it suitable for battery-powered applications.

The specific data is subject to PDF, and the above content is for reference

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