Allicdata Part #: | MMBT6517LT3-ND |
Manufacturer Part#: |
MMBT6517LT3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 350V 0.1A SOT-23 |
More Detail: | Bipolar (BJT) Transistor NPN 350V 100mA 200MHz 225... |
DataSheet: | MMBT6517LT3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 350V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 50mA, 10V |
Power - Max: | 225mW |
Frequency - Transition: | 200MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Base Part Number: | MMBT6517 |
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MMBT6517LT3 Application field and Working Principle
The MMBT6517LT3 is one of a new range of low-power NPN transistors from the world leader in semiconductors, Fairchild Semiconductor. This advanced device represents the state of the art in low-power NPN transistor technology, combining an optimized balance of performance and cost. It is designed to meet the needs of the power amplifier, switching and interface circuits found in consumer, automotive and industrial applications.
The differential pair configuration of the MMBT6517LT3 makes it suitable for many applications, including driving low power MOSFETs, solutions in RF amplifier and power management systems, as well as general audio amplifiers. The high gain and low saturation voltage of the transistor make it suitable for a variety of applications including automated test equipment and DC motor control.
The MMBT6517LT3 is able to handle high frequency signals and has low noise levels. It also has low input/output capacitance and a low turn-off current. This makes it suitable for use in battery operated systems where minimal power consumption is a must.
Working Principle of MMBT6517LT3
The MMBT6517LT3 is a Bipolar Junction Transistor (BJT) because it consists of two regions, one doped with P-type semiconductor material and the other doped with N-type semiconductor material. This combination of two asymmetric parts makes it possible for the MMBT6517LT3 to function as a switch by controlling the current between the two electrodes, also known as the emitter and the collector.
The emitter of the MMBT6517LT3 is used to inject minority carriers into the base region. These minority carriers are then used to control the current between the collector and the emitter by allowing or blocking the flow of electrons. This transistor can also act as an amplifier as it can amplify small electrical signals.
In addition to its switching and amplification characteristics, the MMBT6517LT3 transistors are also well suited for use in oscillators, as well as high frequency amplifiers. These transistors have a very high frequency response, which is important in many types of applications, such as those found in radio frequency (RF) amplifiers.
Conclusion
The MMBT6517LT3 is an advanced NPN transistor from Fairchild Semiconductor that is designed to meet the needs of automotive, consumer, and industrial applications. It is well suited for a wide range of applications, including driving low power MOSFETs, solutions in RF amplifier and power management systems, as well as general audio amplifiers. In addition to its multiple uses, it is also suitable for use in oscillators and high-frequency amplifiers. It has low input/output capacitance, a low turn-off current, and a high gain with low saturation voltage. Overall, the MMBT6517LT3 is an excellent component for a variety of uses due to its versatile features and capabilities.
The specific data is subject to PDF, and the above content is for reference
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