MMBTA55-7 Discrete Semiconductor Products |
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Allicdata Part #: | MMBTA55DITR-ND |
Manufacturer Part#: |
MMBTA55-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PNP 60V 0.5A SOT23-3 |
More Detail: | Bipolar (BJT) Transistor PNP 60V 500mA 50MHz 300mW... |
DataSheet: | MMBTA55-7 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 100mA, 1V |
Power - Max: | 300mW |
Frequency - Transition: | 50MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | MMBTA55 |
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The MMBTA55-7 is a single bipolar junction transistor (BJT), a type of transistor that utilizes both electrons & holes to control current depending on the current-voltage relationship. This device is designed to cover a wide range of applications including power control, analog amplifiers and other circuit functions. The MMBTA55-7 is an ideal choice for those that require a versatile transistor.
The MMBTA55-7 is a versatile transistor, since it can be used in various circuits and applications. It is suitable for use in medium power systems, providing a high voltage gain, stable gain characteristics and low noise. The MMBTA55-7 is also capable of driving environments such as switching, modulation and control, and also has low supply current characteristics. This means it can be used in applications such as AC/DC power control, automotive electronics, LCD bias and switching circuits.
The working principle of the MMBTA55-7 is based on the fact that when enough current is supplied through the base, it creates a potential difference between the collector and the emitter, allowing electrons to pass through the junction. This current flow is then controlled by the voltage difference between the collector and the emitter. Through this the collector current can be controlled, leading to power control applications. The MMBTA55-7 provides a high voltage gain, meaning that the voltage needed to drive the transistor is low, leading to increased efficiency of the built circuit.
The MMBTA55-7 features various pins arranged in a prescribed pattern – the sequence is usually Base, Collector, Emitter (B–C–E). The device is provided in surface mount and through hole packages, which are the standard package sizes established by JEDEC. The nominal maximum collector current is 7a, with a maximum collector-emitter voltage of 60V. The power dissipation is 600W for the through-hole version, and 350W for the surface mount version.
The MMBTA55-7 is unique in that it offers superior performance in terms of its small size, high voltage gain and collector current. It is an ideal choice for applications that require medium power supplies, low voltage operation and easy customization of the current output. This makes it a popular choice among engineers, as it can be used in most applications requiring current control. In addition, it offers excellent noise performance and can handle high temperature/humidity environments.
In conclusion, the MMBTA55-7 is an excellent choice for any application requiring current control. Its small size, high voltage gain, collector current and low power dissipation make it an ideal choice for those that require a versatile transistor. Its reliable performance, convenience of customization and excellent noise characteristics make it a perfect choice for anyone in search of a reliable, efficient transistor.
The specific data is subject to PDF, and the above content is for reference
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