MMBT6427-7-F Discrete Semiconductor Products

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN - Darlington
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	40V
Vce Saturation (Max) @ Ib, Ic:	1.5V @ 500µA, 500mA
Current - Collector Cutoff (Max):	1µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	20000 @ 100mA, 5V
Power - Max:	300mW
Frequency - Transition:	--
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3
Base Part Number:	MMBT6427

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Introduction to MMBT6427-7-F

MMBT6427-7-F is a type of single bipolar junction transistor (BJT) manufactured by ON Semiconductor. It is a PNP transistor, which makes it great for a wide range of applications such as switching and amplification. It features a maximum collector current of 1.0 A and a low collector-emitter saturation voltage of 0.2 V.

MMBT6427-7-F Applications

MMBT6427-7-F is typically used for switching and amplifier applications. It features a low collector-emitter saturation voltage of 0.2 V, which makes it ideal for applications where low voltage drops across the transistor are desired. The MMBT6427-7-F is suitable for use in a number of different circuits, including amplifying and switching current, general purpose amplifier circuits, amplifier bias circuits, and active load circuits. It is also suitable for use in switching circuits with its low saturation voltage and high current rating.

MMBT6427-7-F Working Principle

MMBT6427-7-F is a bipolar junction transistor (BJT), which is a type of semiconductor device that works by controlling current between two terminals called the emitter and collector. The base terminal is used to control the amount of current flowing between the emitter and collector. When a voltage is applied across the base-emitter terminal, a current called the base current flows in the transistor. This base current then causes current to flow between the emitter and collector. This process is called current amplification, and it is one of the most important functions of a BJT. The amount of current that flows through the transistor is dependent on the amount of base current present, as well as the amount of collector-emitter voltage. As the base current increases, the amount of collector-emitter voltage will decrease. This decrease in collector-emitter voltage is known as saturation, and it is an important part of the BJT operation. The amount of current that can flow through the transistor is limited by the amount of collector-emitter saturation voltage, which is why the MMBT6427-7-F has a low saturation voltage of 0.2 V.

Conclusion

In conclusion, the MMBT6427-7-F is a single bipolar junction transistor (BJT) manufactured by ON Semiconductor. It is typically used for applications such as switching and amplifier circuits, due to its low collector-emitter saturation voltage of 0.2 V. The MMBT6427-7-F works by controlling current between two terminals, the emitter and collector. This current is controlled by the base terminal, and the amount of current that can flow through the transistor is limited by the amount of collector-emitter saturation voltage. Overall, the MMBT6427-7-F is a great choice for a wide range of switching and amplifier applications, and is sure to give you reliable and high quality performance.

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