MR25H256MDF Allicdata Electronics
Allicdata Part #:

819-1041-ND

Manufacturer Part#:

MR25H256MDF

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Everspin Technologies Inc.
Short Description: IC RAM 256K SPI 40MHZ 8DFN
More Detail: MRAM (Magnetoresistive RAM) Memory IC 256Kb (32K x...
DataSheet: MR25H256MDF datasheetMR25H256MDF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: Automotive, AEC-Q100
Packaging: Tray 
Part Status: Not For New Designs
Memory Type: Non-Volatile
Memory Format: RAM
Technology: MRAM (Magnetoresistive RAM)
Memory Size: 256Kb (32K x 8)
Clock Frequency: 40MHz
Write Cycle Time - Word, Page: --
Memory Interface: SPI
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-DFN (5x6)
Description

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Memory technology has been a fast-growing field in recent years with the development of high-speed computer systems and applications. The MR25H256MDF is a type of dynamic random access memory (DRAM) that has recently become popular for its high performance and wide array of application fields. In this article, we will discuss the application fields and working principle of the MR25H256MDF.

The MR25H256MDF is an advanced type of DRAM that is often used as a low-cost, high-performance memory option for a wide range of digital systems, such as PCs and embedded systems. It is also often used for communications equipment, consumer electronics, automotive applications, aerospace and defense applications, medical systems, and industrial automation. The MR25H256MDF is a great choice for systems that require large capacity and high-speed memory at an affordable price point.

The MR25H256MDF is composed of 256 Megaword of ROM and is organized into 32 Megabanks of 8 Megaword each. Each memory device in the MR25H256MDF is composed of a 4-bit/8-bit DRAM core. These DRAM cores are connected together via a high-speed bus and can be configured to provide either 8-bits or 16-bits of data output. The MR25H256MDF also includes an on-chip voltage regulator, which can provide up to 1.8V for the DRAMs.

The working principle behind the MR25H256MDF is that data is stored in memory in an organized manner so that the memory can be accessed quickly. The memory is arranged in rows and columns, with each row containing a group of 8 megaword. To access data stored in the memory, a column address is sent to the device, which then looks up the row containing the desired information. The row access strobe (RAS) signal is then activated, and the desired data is provided on the data bus.

The MR25H256MDF provides several advanced features that make it an attractive choice for high-speed, low-cost memory solutions. The device offers a low-power operation, high-speed data transfer, and a low-latency interface that enables a fast response time. It also includes an error correction system (ECC) to help ensure data integrity, as well as a refresh system that conserves energy and increases the life expectancy of the device. Additionally, the device is compatible with a wide range of operating temperatures and power supply voltages.

In conclusion, the MR25H256MDF is a type of dynamic random access memory (DRAM) that is well suited for a wide range of digital systems, such as PCs and embedded systems. It offers high performance and low cost, as well as several advanced features that make it an attractive choice for memory solutions. Thanks to its organization into 32 Megabanks of 8 Megaword each, it provides fast and reliable data access, while its on-chip voltage regulator and ECC system help ensure data integrity and low power consumption. All of these factors make the MR25H256MDF an excellent choice for a variety of memory needs.

The specific data is subject to PDF, and the above content is for reference

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