MT49H32M9FM-25:B Allicdata Electronics
Allicdata Part #:

MT49H32M9FM-25:B-ND

Manufacturer Part#:

MT49H32M9FM-25:B

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 288M PARALLEL 144UBGA
More Detail: DRAM Memory IC 288Mb (32M x 9) Parallel 400MHz 20n...
DataSheet: MT49H32M9FM-25:B datasheetMT49H32M9FM-25:B Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Discontinued at Digi-Key
Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 288Mb (32M x 9)
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: --
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 144-TFBGA
Supplier Device Package: 144-µBGA (18.5x11)
Description

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MT49H32M9FM-25:B is a type of memory, typically deployed in computers and other digital devices. It is also referred to as DRAM, an abbreviation of Dynamic Random Access Memory. This type of memory is composed of an array of cells, each with a single transistor and capacitor. The capacitor holds a small electrical charge that stores a "1" or a "0"; the transistor acts as a switch to control the flow of the charge between the cell\'s capacitor and the data line. The MT49H32M9FM-25:B memory has a variety of applications across different industries. It is commonly utilized in computers and servers, as it offers high speed storage and retrieval operations. Additionally, this memory type is often used in device application, as it can store and execute instructions for various operations. The MT49H32M9FM-25:B is also ideal for automotive uses, as it can deliver fast access to data and instructions needed for navigation, safety, and entertainment features of vehicles. In the entertainment industry, this memory is often used to store video, audio, and other multimedia content. It is also used in medical equipment, such as imaging and monitoring devices. The working principle of the MT49H32M9FM-25:B memory is based on current sensing technology. The transistor acts as a switch to control the flow of the charge between the cell\'s capacitor and the data line. Depending on whether the charge is significant enough to conduct a current at the transistor\'s gate, the cell can store either a "0" or "1". When the data needs to be written to the memory, a current is used to write the data and when the data needs to be read, the sense amplifiers measure the difference between the charge in the cell and a reference voltage. This allows for the cell to be read quickly and accurately.The MT49H32M9FM-25:B memory is designed for high speed, low power consumption, and high reliability. This is due to the fact that it is composed of a relatively small number of cells and the transistor acts as a switch that regulates the flow of current. The memory also has built-in redundancy, meaning that any errors in the stored data can be corrected by comparing the stored data with a redundant version. Overall, the MT49H32M9FM-25:B is a versatile, efficient, and reliable type of memory. It is ideal for a variety of applications, both consumer and industrial, as it provides high speed storage and retrieval operations, low power consumption, and built-in redundancy. This type of memory is an excellent choice for those seeking reliable and high-speed performance from their storage systems.

The specific data is subject to PDF, and the above content is for reference

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