MT49H32M18SJ-25E:B Allicdata Electronics
Allicdata Part #:

MT49H32M18SJ-25E:B-ND

Manufacturer Part#:

MT49H32M18SJ-25E:B

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 576M PARALLEL 144FBGA
More Detail: DRAM Memory IC 576Mb (32M x 18) Parallel 400MHz 15...
DataSheet: MT49H32M18SJ-25E:B datasheetMT49H32M18SJ-25E:B Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 576Mb (32M x 18)
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: --
Access Time: 15ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 144-TFBGA
Supplier Device Package: 144-FBGA (18.5x11)
Description

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Memory comes in various forms and have various applications in electronic devices. One such memory is the MT49H32M18SJ-25E:B. It is a 64Mb Class SDRAM device, which can be used in a variety of applications. In this article, we will look at the application field and the working principle of the MT49H32M18SJ-25E:B memory.

Application Field

The MT49H32M18SJ-25E:B memory is suitable for use in a variety of electronic devices. It can be used in digital cameras and mobile devices, where it can be used to store photographs and digital information. It is also suitable for use in microprocessors, where it can be used to store data for operations. The memory also has a wide range of applications in embedded systems. It can be used to store data in microcontrollers, and can be used in a variety of applications such as automotive and industrial systems. The memory can also be used in robotics, where it can be used to store instructions and data used by the robot. The memory can also be used in industrial control systems, where it can be used to store settings and parameters.

Working Principle

The MT49H32M18SJ-25E:B memory works on a unique principle. The memory is a synchronous device, meaning that the operations pacing is determined by a clock signal. The memory is clocked at a steady frequency, and the data is read and written in synchronization with the clock signal. The memory is powered by a +3.3V power supply, and the data and address bus are driven by separate signal lines. The memory functions by mapping logical memory locations to physical memory locations. Each memory location is then mapped to its corresponding memory cell, where data can be read and written.

The memory is capable of performing random read and write operations, meaning that data can be read or written to the memory without having to move through the entire memory. This makes the memory ideal for embedded applications, as the memory is able to quickly access the required data in the specified location.

The MT49H32M18SJ-25E:B memory is also capable of performing refresh operations, and is rated for a refresh cycle of 8.192ms. The memory is also capable of performing self refresh operations, allowing it to maintain its contents even when power is removed from the system.

Conclusion

The MT49H32M18SJ-25E:B memory is a versatile device, capable of being used in a variety of applications. It has a wide range of applications in embedded systems, and is capable of performing both random read and write operations. The memory is also suitable for use in digital cameras, microprocessors, and industrial control systems. It is powered by a +3.3V power supply, and utilizes a synchronous clocking system.

The specific data is subject to PDF, and the above content is for reference

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