MT49H16M18SJ-25:B

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Base Part Number:	MT49H16M18
Supplier Device Package:	144-FBGA (18.5x11)
Package / Case:	144-TBGA
Mounting Type:	Surface Mount
Operating Temperature:	0°C ~ 95°C (TC)
Voltage - Supply:	1.7 V ~ 1.9 V
Memory Interface:	Parallel
Access Time:	20ns
Series:	--
Clock Frequency:	400MHz
Memory Size:	288Mb (16M x 18)
Technology:	DRAM
Memory Format:	DRAM
Memory Type:	Volatile
Part Status:	Obsolete
Packaging:	Bulk

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Application Field of MT49H16M18SJ-25:B

MT49H16M18SJ-25:B is a fast and reliable dynamic random access memory (DRAM) component used to store data and instructions for more efficient retrieval and manipulation.It is the most popular memory component for general-purpose computing equipment, embedded system and network equipment.The MT49H16M18SJ-25:B is a high-speed memory component, with maximum guaranteed clock frequency of 166MHz, 8 burst cycles and burst read/write cycle lengths of 4 or 8 clocks. This component features an industry-standard data bus width of 16-bits and is JEDEC-approved.In addition, the MT49H16M18SJ-25:B also offer a comprehensive range of features and specifications to help ensure optimal memory performance and power savings. These features include auto refresh and power down modes. In auto refresh mode, the component will periodically refresh the contents of its registers to ensure data integrity and the correct operation of the component. In power down mode, the component will go into a low power consumption state after a user-defined time interval, thus reducing system power consumption and cost.

Working Principle of MT49H16M18SJ-25:B

The working principle of MT49H16M18SJ-25:B is based on the concept of an electrical capacitance. In this type of DRAM, a storage cell is constructed from a capacitor and a transistor. When a voltage is applied, the capacitor stores an electrical charge, which is then used to store the data.Every memory cell holds a single bit of information. In order to access the cells, the MT49H16M18SJ-25:B uses address and data busses to control which cells are to be read and/or written. When the processor instructs the memory component to read or write data, it selects a specific cell by specifying the appropriate address. The voltage applied to the data bus determines whether or not the cell is written or read.In order to access data in the component quickly, it is organized into banks, with each bank consisting of multiple data or address busses. This arrangement allows the processor to access multiple cells simultaneously, greatly increasing the component’s data transfer rates.In order to ensure data integrity, the MT49H16M18SJ-25:B includes auto-refresh and power-down modes. In auto-refresh mode, the component refreshes the contents of its registers periodically, thus ensuring the integrity of the stored data. In power-down mode, the component goes into a low power consumption state after a user-defined time interval, thus reducing system power consumption and cost.

Conclusion

The MT49H16M18SJ-25:B is a powerful, high-performance dynamic random access memory component. It offers a comprehensive range of features and specifications to help ensure optimal memory performance, data integrity, and power savings. The component features an industry-standard data bus width of 16-bits and is JEDEC-approved. With its high clock frequency, burst read/write cycles,auto-refresh and power-down modes, this component is well suited for use in general-purpose computing equipment, embedded system and network equipment.

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