Allicdata Part #: | MT49H16M36BM-25:A-ND |
Manufacturer Part#: |
MT49H16M36BM-25:A |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 576M PARALLEL 144UBGA |
More Detail: | DRAM Memory IC 576Mb (16M x 36) Parallel 400MHz 20... |
DataSheet: | MT49H16M36BM-25:A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | DRAM |
Memory Size: | 576Mb (16M x 36) |
Clock Frequency: | 400MHz |
Write Cycle Time - Word, Page: | -- |
Access Time: | 20ns |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.9 V |
Operating Temperature: | 0°C ~ 95°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 144-TFBGA |
Supplier Device Package: | 144-µBGA (18.5x11) |
Base Part Number: | MT49H16M36 |
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Memory is an important part of any electronic device. Without memory, there would be no way to store data or programs. MT49H16M36BM-25 is a particular type of memory chip that is used in many different applications. In this article, we will discuss what the MT49H16M36BM-25 is and what it is used for, as well as its working principle.
MT49H16M36BM-25 Application Field
The MT49H16M36BM-25 is a type of static random access memory (SRAM) chip. This means that it stores information in a non-volatile form. It is used in many applications where space and power are a concern. It is often used for industrial control systems, automotive applications, robotics, medical devices, and many other applications.
The MT49H16M36BM-25 is a 16 Mb SRAM. It has a fast read/write speed, low power consumption, and high endurance. Its operating temperature range is from -40°C to +105°C, and its supply voltage is from 1.7 to 3.6V. It also has built-in error detection and correction circuitry, making it highly reliable.
MT49H16M36BM-25 Working Principle
The MT49H16M36BM-25 uses a technique called "cell-to-cell coupling" to store data. In this technique, the cells are arranged in rows and columns, and each cell is connected to its neighbor. When reading from a cell, information from the others in the column is also read. This allows for faster read times, since the entire column of cells can be read in one operation.
The MT49H16M36BM-25 also supports "word-level access", which allows for faster reading/writing of large blocks of data. This is done by splitting the data into smaller chunks, and then reading/writing each chunk in turn. This reduces the number of memory cycles required to complete a read or write operation.
In addition to its cell-to-cell coupling and word-level access features, the MT49H16M36BM-25 also supports page mode and wrapped read/write cycles. In page mode, data is stored in pages, or blocks of 1, 2, 4 or 8 words. This allows data in the same page to be accessed more quickly than if it were stored separately. Wrapped read/write cycles increase the speed of reads and writes by allowing the memory to re-read words from a previous read operation, without having to perform a new read operation.
Conclusion
The MT49H16M36BM-25 is a type of static random access memory (SRAM) chip that is used in many applications where space and power are a concern. It has a fast read/write speed, low power consumption, and high endurance. Its features include cell-to-cell coupling, word-level access, page mode, and wrapped read/write cycles, making it a very versatile memory solution. The MT49H16M36BM-25 is an ideal choice for systems where reliable, high-speed memory is required.
The specific data is subject to PDF, and the above content is for reference
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