Allicdata Part #: | MT53B256M32D1GZ-062AIT:B-ND |
Manufacturer Part#: |
MT53B256M32D1GZ-062 AIT:B |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 8G 1600MHZ |
More Detail: | SDRAM - Mobile LPDDR4 Memory IC 8Gb (256M x 32) 1... |
DataSheet: | MT53B256M32D1GZ-062 AIT:B Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPDDR4 |
Memory Size: | 8Gb (256M x 32) |
Clock Frequency: | 1600MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | -- |
Voltage - Supply: | 1.1V |
Operating Temperature: | -40°C ~ 95°C (TC) |
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The MT53B256M32D1GZ-062 AIT:B is a main memory (RAM) based device which is used as a storage source for computer memory. The most common usage of the device is in personal computers, server applications, embedded systems and other digital devices. It is especially designed to provide a fast and reliable memory storage solution with high-capacity and flexibility.
The device is composed of a set of 256Mx32bit DDR3 or DDR4 DRAM modules, organized as sixteen 64Mx32bit modules or four 256Mx32bit modules. All four modules have an independent bus and data bus interface, allowing for a greater throughput than with a single module of the same capacity. The device also features four independent chip select lines, allowing to extend its capacity even further with more than one module on the same memory system.
The device is available in different configurations, ranging from a single-bank system to a multiple-bank system. This allows for flexibility in configuration and optimization of speed and capacity. Furthermore, the device is equipped with an error correction code that is able to detect and correct for errors in data transmission, thus ensuring the integrity and reliability of data stored or retrieved in the device.
The working principle of the MT53B256M32D1GZ-062 AIT:B is based on DRAM technology. DRAM stands for dynamic random access memory, and is a type of random access memory which stores data as an electron charge on an individual capacitor within a memory module. When data is written to the cell, the electrons are transferred to a lower energy level, to create a \'0\'. Conversely, when data is retrieved, the electrons are transferred back to a higher energy level to create a \'1\'. As a result, the write and read process is quick and efficient.
In addition to its use in personal computers, the MT53B256M32D1GZ-062 AIT:B can be used as a memory component in embedded systems, industrial robots, medical and aerospace equipment, 3D printers and more. It is suitable for applications that require a high data input/output rate, such as streaming video and multimedia applications. As such, this device is highly valued for its flexibility, reliability, high performance and efficient power consumption.
In conclusion, the MT53B256M32D1GZ-062 AIT:B is a highly reliable, efficient and powerful memory solution, suitable for a variety of applications and digital devices. Based on DRAM technology, the device offers high performance and capacity, making it ideal for fast data storage and retrieval operations. Furthermore, its flexibility and efficiency make it a desirable choice for embedded systems and other digital devices.
The specific data is subject to PDF, and the above content is for reference
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