MT53B512M64D4PV-062 WT ES:C TR Allicdata Electronics
Allicdata Part #:

MT53B512M64D4PV-062WTES:CTR-ND

Manufacturer Part#:

MT53B512M64D4PV-062 WT ES:C TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 32G 1600MHZ FBGA
More Detail: SDRAM - Mobile LPDDR4 Memory IC 32Gb (512M x 64) ...
DataSheet: MT53B512M64D4PV-062 WT ES:C TR datasheetMT53B512M64D4PV-062 WT ES:C TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 32Gb (512M x 64)
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: --
Memory Interface: --
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is a fundamental part of computer systems, which is mainly responsible for the storage and retrieval of data. MT53B512M64D4PV-062 WT ES:C TR is a type of DDR4 DRAM memory module that supports up to 8GB capacity and 1425MHz transfer bandwidth. It utilizes the latest architecture and packaging technology, enabling it to provide excellent performance for a variety of applications.

Application Field:

MT53B512M64D4PV-062 WT ES:C TR can be used in a variety of applications, such as game consoles, workstations, servers, embedded systems and industrial automation. It is also suitable for storage-intensive applications, such as video editing, graphic design and data analysis, as well as financial and medical applications. It is also ideal for a variety of other uses, such as enterprise applications, cloud computing and edge computing.

Working Principle:

MT53B512M64D4PV-062 WT ES:C TR operates on a non-volatile memory (NVM) technology, which ensures that data is retained even when the power is removed. This technology works by storing the data in the cells in such a way that it retains its integrity even when the power is turned off. The NVM technology also helps protect the data from physical damage, such as shocks, vibration and extreme temperatures.

MT53B512M64D4PV-062 WT ES:C TR also incorporates error correction and redundancy technology to ensure that data stored in its cells is correct and reliable. This technology helps reduce the risk of data corruption, enabling it to deliver a reliable and dependable performance for a variety of applications. This makes it an ideal choice for mission-critical applications, such as in financial and medical industries.

MT53B512M64D4PV-062 WT ES:C TR is a high-performance memory module that is designed to provide dependable operation for a variety of high-performance applications. With its high-capacity and bandwidth, it is capable of handling a variety of demanding applications with ease. With its advanced error correction and redundancy technology, it is able to provide reliable data storage and retrieval operations, making it an ideal solution for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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