MT53B384M64D4TP-062 XT ES:B TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM - Mobile LPDDR4
Memory Size:	24Gb (384M x 64)
Clock Frequency:	1600MHz
Write Cycle Time - Word, Page:	--
Memory Interface:	--
Voltage - Supply:	1.1V
Operating Temperature:	--

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory: MT53B384M64D4TP-062 XT ES:B TR Application Field and Working Principle

MT53B384M64D4TP-062 XT ES:B TR is a type of dynamic random access memory (DRAM) used for computers and communication systems. It is one of the newest technologies developed for providing high-speed communications and data storage. This type of memory can be used in various application fields and its working principle will be discussed in this article.The MT53B384M64D4TP-062 XT ES:B TR DRAM technology is used in a variety of applications. It is used in smartphones and other electronic devices such as digital cameras, GPS systems, and other portable devices. It is also used in cloud computing, gaming, supercomputers, and in automotive applications. This technology provides high speed and reliability with low power consumption. This makes it the ideal choice for many applications, especially those that require rapid data processing.The working principle of MT53B384M64D4TP-062 XT ES:B TR DRAM is based on the principle of coupling two or more DRAM cells into an integrated circuit package. This is done by combining the power of several DRAM cells into a single, powerful chip. The integrated circuit package consists of multiple DRAM chips, each containing its own memory cell. The turbo-mode feature of the DRAM allows for multiple accesses of data from the DRAM cells to be executed in quick succession. This is made possible by the DRAM cells being arranged in a regular, predictable pattern.The speed and reliability of MT53B384M64D4TP-062 XT ES:B TR DRAM is enhanced by its multiplexing logic. This logic allows the memory to send and receive multiple signals at once. This ensures that any data accesses are kept within a reasonable time frame. The multiple signal lines also reduce signal noise and interference, which can slow down the data transfer rate.The refresh cycle of the MT53B384M64D4TP-062 XT ES:B TR DRAM is a significant feature of the memory technology as it provides reliable operation even during power fluctuations. This is achieved by continuously refreshing the DRAM cells with a pulse, which was created on a regular basis. This ensures that the data stored in the DRAM cells remain consistent and safe even when power levels fluctuate. When the DRAM is required to read or write data, a command is sent to the chip which allows the cells to be addressed and the data accessed immediately.MT53B384M64D4TP-062 XT ES:B TR DRAM is suitable for applications that require rapid data processing and reliable operation. The multiplexing logic provides fast access of data and the refresh cycle ensures that data is not lost during power fluctuations. This technology is commonly used in smartphones and other electronic devices, in cloud computing, gaming, supercomputers, and automotive applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description