Allicdata Part #: | MT53B256M32D1NP-062WTES:CTR-ND |
Manufacturer Part#: |
MT53B256M32D1NP-062 WT ES:C TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 8G 1600MHZ 200FBGA |
More Detail: | SDRAM - Mobile LPDDR4 Memory IC 8Gb (256M x 32) 1... |
DataSheet: | MT53B256M32D1NP-062 WT ES:C TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPDDR4 |
Memory Size: | 8Gb (256M x 32) |
Clock Frequency: | 1600MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | -- |
Voltage - Supply: | 1.1V |
Operating Temperature: | -30°C ~ 85°C (TC) |
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Memory: MT53B256M32D1NP-062 WT ES:C TR Application Field and Working Principle
Memory has been an integral part of computing since the dawn of the modern era. It is used to store information and programs in a form that can be easily accessed and manipulated. It’s available in various forms, from volatile memory such as random access memory (RAM) to non-volatile memory such as read only memory (ROM) and Flash memory. MT53B256M32D1NP-062 WT ES:C TR is an example of non-volatile memory that is used for a variety of applications.
MT53B256M32D1NP-062 WT ES:C TR is a double-cell (2-bit) Flash memory module consisting of 256M bits, or 32M bytes, of storage capacity. This type of particular Flash memory module is designed to handle high temperatures, such as those experienced by automotive applications, telecommunications, and enterprise storage. The module is also equipped with advanced error correction capabilities, making it suitable for use in mission-critical applications.
This module is organized into pages and blocks, allowing for easier and faster data access when compared to standard ROMs and PROMs. It consists of two separate arrays that can be used separately or in conjunction with one another. They both contain identical content, however the data stored in one array can be programmed and/or erased without affecting the content of the other. The two arrays are referred to as the primary (PRI) array and the secondary (SEC) array.
The module features two different operating voltages, one designed for read operations and the other for write/erase operations. It also offers advanced error correction capabilities, allowing it to recover from minor data errors during read operations. The module is also equipped with an internal power failure detector, allowing it to protect stored information from sudden power outages.
When it comes to applications, MT53B256M32D1NP-062 WT ES:C TR is most commonly used in storage systems, networking, industrial control, and military systems. Its combination of high temperature resistance, advanced error correction, and internal power failure protection makes it the preferred choice for mission critical applications. Additionally, its wide range of operating temperatures and low power consumption makes it suitable for use in space, airborne, and automotive applications.
In summary, MT53B256M32D1NP-062 WT ES:C TR is a Flash memory module designed to handle high temperatures and is used in a variety of applications. It features two separate arrays that can be used separately or in conjunction with one another, and it is equipped with advanced error correction capabilities and an internal power failure detector. Developed primarily for mission critical applications, MT53B256M32D1NP-062 WT ES:C TR is popular in storage systems, networking, industrial control, and military systems and can also be used in space, airborne, and automotive applications.
The specific data is subject to PDF, and the above content is for reference
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