Allicdata Part #: | MT53B512M64D4PV-062WT:CTR-ND |
Manufacturer Part#: |
MT53B512M64D4PV-062 WT:C TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 32G 1600MHZ FBGA |
More Detail: | SDRAM - Mobile LPDDR4 Memory IC 32Gb (512M x 64) ... |
DataSheet: | MT53B512M64D4PV-062 WT:C TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPDDR4 |
Memory Size: | 32Gb (512M x 64) |
Clock Frequency: | 1600MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | -- |
Voltage - Supply: | 1.1V |
Operating Temperature: | -30°C ~ 85°C (TC) |
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The MT53B512M64D4PV-062 WT:C TR is a dynamic random access memory (DRAM) product, which is the most widely used type of memory currently available on the market. It is typically used as main system memory in modern computer systems and is available in various configurations. DRAM is much faster than static RAM (SRAM), but still slower than other forms of computer memory such as flash memory. This article will discuss the application field and working principle of the MT53B512M64D4PV-062 WT:C TR Memory.
The MT53B512M64D4PV-062 WT:C TR Memory is mostly used in industrial and medical applications that require high-capacity and high-speed memory. It is also used for machine learning and artificial intelligence applications, where deep learning algorithms require large amounts of data to be processed quickly. The memory is also used for supercomputing applications, where the amount of data being processed at any given time is considerably greater than with other types of systems. Additionally, the memory is also used in a variety of embedded systems, such as automotive and aviation applications.
The MT53B512M64D4PV-062 WT:C TR Memory is a synchronous dynamic random access memory product. It is a form of computer memory that can store multiple bits of data in a single memory access. The memory is organized in a hierarchical structure, with a significant portion of the memory containing many small RAM cells, each containing a single bit of data. When a request is made to access a particular bit (or group of bits) in the memory, the memory automatically searches the RAM cells and returns the requested data. This process is much faster than accessing external memory, and is the primary reason why DRAM is so commonly used in modern computer systems.
The MT53B512M64D4PV-062 WT:C TR Memory is also designed to be power efficient. The memory is built using very small transistors, which helps keep the power draw low. Additionally, the memory is organized in such a way that allows it to access multiple bits of data at the same time, which allows the system to reduce the amount of power it draws while accessing the memory. The lower power consumption of the memory makes it suitable for a variety of applications that require absolute minimum power consumption.
The MT53B512M64D4PV-062 WT:C TR Memory is also designed to be very reliable. The memory is designed with redundancy, which means that it contains multiple copies of each bit of data. If a bit of data becomes corrupted, the memory can automatically detect and correct the issue, ensuring that the data remains reliable. The memory also utilizes error correcting codes, which help to ensure that any errors that do occur are corrected quickly and accurately.
In conclusion, the MT53B512M64D4PV-062 WT:C TR Memory is an incredibly versatile and powerful type of memory. It is used in a variety of applications, including industrial, medical, and supercomputing applications. The memory is also designed to be extremely power efficient and reliable, which makes it suitable for a variety of uses. With its incredible versatility and reliability, the MT53B512M64D4PV-062 WT:C TR Memory is the perfect option for any application where memory storage and quick access are of the utmost importance.
The specific data is subject to PDF, and the above content is for reference
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