MT53B256M32D1NP-062 AIT:C TR Allicdata Electronics
Allicdata Part #:

MT53B256M32D1NP-062AIT:CTR-ND

Manufacturer Part#:

MT53B256M32D1NP-062 AIT:C TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 8G 1600MHZ 200FBGA
More Detail: SDRAM - Mobile LPDDR4 Memory IC 8Gb (256M x 32) 1...
DataSheet: MT53B256M32D1NP-062 AIT:C TR datasheetMT53B256M32D1NP-062 AIT:C TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 8Gb (256M x 32)
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: --
Memory Interface: --
Voltage - Supply: 1.1V
Operating Temperature: -40°C ~ 95°C (TC)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

In the field of memory technology, MT53B256M32D1NP-062 AIT:C is one of the most innovative and powerful types of memory products developed. It is based on a highly advanced 3D stacking technology which is integrated into the semiconductor manufacturing process. This type of memory provides a high degree of efficiency in terms of storage capacity, speed, and reliability, making it ideal for a variety of applications.

In terms of its application fields, MT53B256M32D1NP-062 AIT:C has been used in a variety of devices, ranging from digital cameras to computer systems. It is also often used in laptops and other mobile devices as well as in embedded systems. The memory is suitable for applications that require high-speed read/write operations and high bandwidth, such as gaming consoles and CAD/CAM applications. Additionally, its advanced 3D stacking technology ensures that it can take up minimal space, making it ideal for use in embedded systems.

The working principle of MT53B256M32D1NP-062 AIT:C is based on advanced 3D stacking technology. This enables a higher number of transistors to be placed on a single semiconductor device, thereby increasing its memory capacity. Furthermore, the memory cells are enclosed in a sealed package which makes them more reliable than traditional memories and also prevents them from being damaged by static electricity or other types of interference. The memory cells are also arranged in an entirety, meaning that higher speeds can be achieved during the read/write operations.

The MT53B256M32D1NP-062 AIT:C memory is also highly reliable, as it is designed to meet the toughest reliability standards. It is also designed to be resistant to power failure, temperature fluctuations, and other external environment factors. Furthermore, the memory\'s 3D stacking technology is also designed to support high-speed read/write operations without any latency.

Overall, MT53B256M32D1NP-062 AIT:C is a highly advanced memory product, with adaptation to a variety of application fields. It offers high speed, high storage capacity, and high reliability, making it ideal for gaming consoles, CAD/CAM applications, and embedded systems. The memory\'s 3D stacking technology enables a higher number of transistors to be placed on a single semiconductor device, increasing its storage capacity, while its integrated closed package ensures that it is resistant to power failure and other environmental factors. The MT53B256M32D1NP-062 AIT:C memory is, therefore, an exceptionally powerful and reliable resource in the field of memory technology.

The specific data is subject to PDF, and the above content is for reference

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