Allicdata Part #: | MT53B256M64D2NV-062XTES:CTR-ND |
Manufacturer Part#: |
MT53B256M64D2NV-062 XT ES:C TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 16G 1600MHZ FBGA |
More Detail: | SDRAM - Mobile LPDDR4 Memory IC 16Gb (256M x 64) ... |
DataSheet: | MT53B256M64D2NV-062 XT ES:C TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPDDR4 |
Memory Size: | 16Gb (256M x 64) |
Clock Frequency: | 1600MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | -- |
Voltage - Supply: | 1.1V |
Operating Temperature: | -- |
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The MT53B256M64D2NV-062 XT ES:C TR is a type of memory that is used in a variety of applications. Memory is one of the most important components of any computer system, as it stores data and instructions to allow the system to run efficiently. The MT53B256M64D2NV-062 XT ES:C TR is a 64-Mbit synchronous dynamic random access memory (SDRAM). It is designed to be used in applications such as personal computers (PCs), servers, embedded system, communication and industrial systems, medical systems and memory-intensive machines.
The MT53B256M64D2NV-062 XT ES:C TR has a 64-Mbit capacity and utilizes a 128Mx8-bit organization. It is based on a 1.2V core and an external bias of 1.5V/3.3V. It is compliant with the JEDEC DDR3 specifications and it offers superior data speed up to a maximum of 1600 Mbps. The memory is also equipped with low power technology and is compatible with Intel Core processors. It also has on-die termination technology (ODT) to reduce the power consumption and ensure reliability.
The MT53B256M64D2NV-062 XT ES:C TR operates on a cycle time of 6.75 ns and contains an 8-byte prefetch buffer. It has an 8-bank operation with a burst length of up to 8. It is also capable of performing simultaneous operations on multiple banks, which increases the performance of the memory. Furthermore, the memory has an address translator and a data pointer that give it the ability to perform fast data transfer between the banks.
The MT53B256M64D2NV-062 XT ES:C TR is capable of a maximum data transfer rate of 1600 Mbps and is optimized for high-performance applications. It utilizes a dual-data rate technology to provide higher memory bandwidth and reduced power consumption. The memory also includes error-correcting code (ECC) that helps to detect and correct single-bit errors. This ensures the integrity of critical data in mission-critical applications.
The working principle of the MT53B256M64D2NV-062 XT ES:C TR is based on the fact that data is stored in clusters, or banks, which can be accessed through cycles or bursts. By accessing multiple banks at once, the memory can transfer and process data quickly and efficiently. This allows it to deliver speeds that are high enough to support real-time data processing and intensive gaming. Furthermore, the memory also comes with low power technology and thermal design power, ensuring that it is designed to last and operate reliably, even under extreme conditions.
In conclusion, the MT53B256M64D2NV-062 XT ES:C TR is an advanced type of memory that is designed for high-performance applications. It has a fast data rate, low power consumption, error-correcting code, and simultaneous operations on multiple banks. Furthermore, the memory is equipped with on-die termination technology, helping to reduce power consumption and ensure reliable operation. All these features make the MT53B256M64D2NV-062 XT ES:C TR ideal for personal computers, servers, embedded systems, communication and industrial systems, medical systems and memory-intensive machines.
The specific data is subject to PDF, and the above content is for reference
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